位置：首页 > IC中文资料第1099页 > FQPF9N08
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
FQPF9N08 | 80VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstanda | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  |   |
FQPF9N08 | iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=7A@TC=25℃ ·DrainSourceVoltage-VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.21Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=7A@TC=25℃ ·DrainSourceVoltage-VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.21Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
80VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstand | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
SteeringDiodeArrays-ESDSuppressors Features •(16kV)IEC61000-4-2capable •FastReverseRecoveryTime •FastTurnonTime •LowCapacitance •SMDPackages Applications •SignalTermination •SignalConditioning •ESDSuppression •TransientSuppression | COMCHIPComchip Technology 典琦典琦科技股份有限公司 |  | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=9.3A@TC=25℃ ·DrainSourceVoltage-VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.21Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
80VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstanda | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
80VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
80VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstanda | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | |
FQPF9N08产品属性
- 类型
描述
- 型号
FQPF9N08
- 功能描述
MOSFET 80V N-Channel QFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Fairchild |
23+ |
33500 |
|||||
onsemi(安森美) |
24+ |
TO220F |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
FAIRCHILD/仙童 |
24+ |
NA/ |
3950 |
原装现货,当天可交货,原型号开票 |
|||
VB |
25+ |
TO-220F |
5000 |
原装正品,假一罚十! |
|||
Fairchild/ON |
22+ |
TO2203 |
9000 |
原厂渠道,现货配单 |
|||
FAIRC |
23+ |
TO-220F |
7300 |
专注配单,只做原装进口现货 |
|||
FAIRCHILD/仙童 |
23+ |
TO220 |
66985 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
NEXPERIA/安世 |
23+ |
WLCSP63-2 |
69820 |
终端可以免费供样,支持BOM配单! |
|||
仙童 |
06+ |
TO-220F |
3000 |
原装库存 |
|||
FSC/ON |
23+ |
原包装原封□□ |
600 |
原装进口特价供应特价，原装元器件供应，支持开发样品更多详细咨询库存 |
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FQPF9N08数据表相关新闻
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2020-12-31
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