型号 功能描述 生产厂家 企业 LOGO 操作
FQD9N08

80V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a

FAIRCHILD

仙童半导体

FQD9N08

80V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand

FAIRCHILD

仙童半导体

FQD9N08

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=7.4A@ TC=25℃ ·Drain Source Voltage -VDSS=80V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.21Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

80V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand

FAIRCHILD

仙童半导体

MOSFET N-CH 80V 7.4A DPAK

ONSEMI

安森美半导体

Steering Diode Arrays - ESD Suppressors

Features • (16kV) IEC 61000-4-2 capable • Fast Reverse Recovery Time • Fast Turn on Time • Low Capacitance • SMD Packages Applications • Signal Termination • Signal Conditioning • ESD Suppression • Transient Suppression

COMCHIP

典琦

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=9.3A@ TC=25℃ ·Drain Source Voltage -VDSS=80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.21Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

80V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a

FAIRCHILD

仙童半导体

80V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

FAIRCHILD

仙童半导体

FQD9N08产品属性

  • 类型

    描述

  • 型号

    FQD9N08

  • 功能描述

    MOSFET

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-3-2 8:36:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FAIRCILD
22+
TO-252
8000
原装正品支持实单
FAIRCHILD/仙童
22+
SOT252
100000
代理渠道/只做原装/可含税
onsemi
25+
TO-252AA
21000
正规渠道,免费送样。支持账期,BOM一站式配齐
onsemi
25+
TO-252AA
21000
正规渠道,免费送样。支持账期,BOM一站式配齐
VB
2026+
TO-252
5000
原装正品,假一罚十!
国产
24+
TO-252
7800
全新原厂原装正品现货,低价出售,实单可谈
FAIRCHILD
24+
TO-252
8866
FAIRCHILD/仙童
25+
TO-252
45000
FAIRCHILD/仙童全新现货FQD9N08即刻询购立享优惠#长期有排单订
FAIRCHILD
SOT252
30216
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S
NK/南科功率
2025+
TO-252
986966
国产

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