位置：首页 > IC中文资料第4122页 > FQD9N08
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
FQD9N08 | 80VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstanda | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  |   |
FQD9N08 | 80VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstand | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | |
FQD9N08 | iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=7.4A@TC=25℃ ·DrainSourceVoltage-VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.21Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
80VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstand | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
SteeringDiodeArrays-ESDSuppressors Features •(16kV)IEC61000-4-2capable •FastReverseRecoveryTime •FastTurnonTime •LowCapacitance •SMDPackages Applications •SignalTermination •SignalConditioning •ESDSuppression •TransientSuppression | COMCHIPComchip Technology 典琦典琦科技股份有限公司 |  | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=9.3A@TC=25℃ ·DrainSourceVoltage-VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.21Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
80VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstanda | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
80VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | |
FQD9N08产品属性
- 类型
描述
- 型号
FQD9N08
- 功能描述
MOSFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
22+ |
SOT252 |
100000 |
代理渠道/只做原装/可含税 |
|||
FAIRCHILD |
20+ |
TO-252 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
FAIRCHILD |
23+ |
TO-252 |
11000 |
全新原装 |
|||
FAIRCILD |
22+ |
TO-252 |
8000 |
原装正品支持实单 |
|||
FAIRCHILD |
08+(pbfree) |
TO-252 |
8866 |
||||
FAIRC |
2020+ |
TO-252(DPAK) |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
|||
ON/安森美 |
TO-252 |
505348 |
16余年资质 绝对原盒原盘 更多数量 |
||||
ON-安森美 |
24+25+/26+27+ |
TO-252-3 |
57500 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
FAIRC |
23+ |
TO-252 |
90000 |
一级代理商进口原装现货、价格合理 |
|||
FAIRCHILD |
1709+ |
SOT-252 |
32500 |
普通 |
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