400V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withst

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=3A@ TC=25℃ ·Drain Source Voltage -VDSS=400V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.6Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N 沟道 QFET® MOSFET 400V, 3.0A, 1.6Ω

Fast Switching Speed

文件：67.37 Kbytes Page：2 Pages

5A, 400V N-CHANNEL POWER MOSFET

文件：198.99 Kbytes Page：6 Pages

5A 400V N-channel enhanced field effect transistor

文件：799.15 Kbytes Page：5 Pages

N-CHANNEL POWER MOSFET

文件：291.5 Kbytes Page：7 Pages

N-CHANNEL POWER MOSFET

文件：291.5 Kbytes Page：7 Pages