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FQPF4N90C价格
参考价格：￥3.2817
型号：FQPF4N90C 品牌：Fairchild 备注：这里有FQPF4N90C多少钱，2025年最近7天走势，今日出价，今日竞价，FQPF4N90C批发/采购报价，FQPF4N90C行情走势销售排行榜，FQPF4N90C报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FQPF4N90C | 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |   | |
FQPF4N90C | 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | |
FQPF4N90C | Isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.2Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con | ISC 无锡固电 | | |
FQPF4N90C | N-Channel QFET® MOSFET 900 V, 4.0 A, 4.2 Ω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and hi | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | |
FQPF4N90C | 功率 MOSFET，N 沟道，QFET®，900 V，4 A，4.2 Ω，TO-220F | ONSEMI 安森美半导体 | | |
900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
N-Channel QFET® MOSFET 900 V, 4.0 A, 4.2 Ω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and hi | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
4 Amps, 900 Volts N-CHANNEL POWER MOSFET 文件：184.95 Kbytes Page：6 Pages | UTC 友顺 | | ||
Fast Switching Speed 文件：65.65 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
4 Amps, 900 Volts N-CHANNEL MOSFET 文件：165.57 Kbytes Page：6 Pages | UTC 友顺 | | ||
4.0A, 900V N-CHANNEL POWER MOSFET 文件：197.15 Kbytes Page：5 Pages | UTC 友顺 | |
FQPF4N90C产品属性
- 类型
描述
- 型号
FQPF4N90C
- 功能描述
MOSFET 900V N-Ch Q-FET advance C-Series
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
23+ |
TO-220F |
50000 |
全新原装正品现货,支持订货 |
|||
ON/安森美 |
24+ |
TO-220F |
35700 |
全新原装现货特价销售,欢迎来电查询 |
|||
ON |
23+ |
TO-220F |
32078 |
10年以上分销商,原装进口件,服务型企业 |
|||
ONSEMI |
2021+ |
TO-220F |
9000 |
原装现货,随时欢迎询价 |
|||
仙童 |
14+ |
TO-220F |
33 |
只做原装正品 |
|||
FSC |
24+ |
TO-220 |
533 |
全新原装环保 |
|||
FAIRCHILD |
23+ |
TO-220F |
65400 |
||||
三年内 |
1983 |
只做原装正品 |
|||||
仙童 |
05+ |
TO-220F |
4000 |
原装进口 |
|||
ON/安森美 |
2410+ |
TO-220F |
80000 |
原装正品.假一赔百.正规渠道.原厂追溯. |
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DdatasheetPDF页码索引
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