400V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withst

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=9.5A@ TC=25℃ ·Drain Source Voltage -VDSS=400V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.27Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N 沟道 QFET® MOSFET 400V, 9.5A, 270mΩ

该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关电源、有源功率因数校正（PFC）及照明灯电子镇流器。 •9.5A, 400V, RDS(on)= 270mΩ（最大值）@VGS = 10 V, ID = 4.75A栅极电荷低（典型值：45nC)\n•低 Crss（典型值30pF)\n•100% 经过雪崩击穿测试\"\n• 100% avalanche tested;

400V N-Channel MOSFET

Features • 12.2A, 400V, RDS(on) = 0.27Ω @VGS = 10 V • Low gate charge ( typical 45 nC) • Low Crss ( typical 30 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

400V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withst

N-CHANNEL POWER MOSFET

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400V N-CHANNEL MOSFET

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