400V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withst

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=9.5A@ TC=25℃ ·Drain Source Voltage -VDSS=400V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.27Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N 沟道 QFET® MOSFET 400V, 9.5A, 270mΩ

400V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withst

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=17.2A@ TC=25℃ ·Drain Source Voltage- : VDSS=400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.27Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

400V N-Channel MOSFET

Features • 12.2A, 400V, RDS(on) = 0.27Ω @VGS = 10 V • Low gate charge ( typical 45 nC) • Low Crss ( typical 30 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

N-CHANNEL POWER MOSFET

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400V N-CHANNEL MOSFET

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