400VN-ChannelMOSFET

Features •12.2A,400V,RDS(on)=0.27Ω@VGS=10V •Lowgatecharge(typical45nC) •LowCrss(typical30pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=12.2A@TC=25℃ ·DrainSourceVoltage- :VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.27Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

400VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithst

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=17.2A@TC=25℃ ·DrainSourceVoltage- :VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.27Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

N-CHANNELPOWERMOSFET

文件：192.67 Kbytes Page：5 Pages

400VN-CHANNELMOSFET

文件：730.64 Kbytes Page：8 Pages