丝印代码：FQP17N40；N-Channel QFET® MOSFET 400 V, 16 A, 270 mΩ

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and hi

功率 MOSFET，N 沟道，QFET®，400 V，16 A，270 mΩ，TO-220

该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体®的专有平面条形和 DMOS 技术生产。 这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。 这些器件适用于开关电源、有源功率因数校正（PFC）及照明灯电子镇流器。 •16A，400V，RDS(on)= 270mΩ（最大值）（VGS = 10 V 且 ID = 8A 时）\n•低栅极电荷（典型值 45nC)\n•低 Crss（典型值 30pF)\n•100% 经过雪崩击穿测试;

400V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withst

N-Channel QFET® MOSFET 400 V, 16 A, 270 mΩ

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and hi

400V N-Channel MOSFET

Features • 12.2A, 400V, RDS(on) = 0.27Ω @VGS = 10 V • Low gate charge ( typical 45 nC) • Low Crss ( typical 30 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

400V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withst

N-CHANNEL POWER MOSFET

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400V N-CHANNEL MOSFET

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