isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=9.5A@ TC=25℃ ·Drain Source Voltage -VDSS=250V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.23Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

250V N-Channel MOSFET

250V N-Channel MOSFET

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250V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=15.6A@ TC=25℃ ·Drain Source Voltage -VDSS=250V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.27Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

功率 MOSFET，N 沟道，QFET®，250 V，15.6 A，270 mΩ，TO-220F

250V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w

250V N-Channel MOSFET

Features • 18.5A, 250V, RDS(on) = 0.23Ω @VGS = 10 V • Low gate charge ( typical 27 nC) • Low Crss ( typical 23 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

250V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

Power MOSFET

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N-Channel 250-V (D-S) 175 C MOSFET

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