250V N-Channel MOSFET

Features • 18.5A, 250V, RDS(on) = 0.23Ω @VGS = 10 V • Low gate charge ( typical 27 nC) • Low Crss ( typical 23 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

250V N-Channel MOSFET

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=17.8A@ TC=25℃ ·Drain Source Voltage- : VDSS=250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.27Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

250V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

250V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

250V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. Features • 16A, 250V, RDS(on) = 0.23 Ω @VGS = 10 V • Low gate charge ( typical 27 nC) • Low Crss ( typical 23 pF) • Fast switching • 100

TMOS POWER FET 16 AMPERES

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TMOS POWER FET 16 AMPERES 250 VOLTS RDS(on) = 0.25 OHM

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