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FQPF13N06价格
参考价格：￥1.9501
型号：FQPF13N06L 品牌：Fairchild 备注：这里有FQPF13N06多少钱，2026年最近7天走势，今日出价，今日竞价，FQPF13N06批发/采购报价，FQPF13N06行情走势销售排行榜，FQPF13N06报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FQPF13N06 | 60V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FAIRCHILD 仙童半导体 |   | |
FQPF13N06 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=9.4A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.135Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | |
FQPF13N06 | 60V N-Channel MOSFET | ONSEMI 安森美半导体 | | |
60V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FAIRCHILD 仙童半导体 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=10A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.11Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
功率 MOSFET，N 沟道，逻辑电平，QFET®，60 V，10 A，110 mΩ，TO-220F | ONSEMI 安森美半导体 | | ||
60V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FAIRCHILD 仙童半导体 | | ||
60V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FAIRCHILD 仙童半导体 | | ||
60V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FAIRCHILD 仙童半导体 | | ||
60V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FAIRCHILD 仙童半导体 | | ||
N-Channel QFET MOSFET 60 V, 10 A, 140 m 文件：803.8 Kbytes Page：8 Pages | FAIRCHILD 仙童半导体 | |
FQPF13N06产品属性
- 类型
描述
- 型号
FQPF13N06
- 功能描述
MOSFET 60V N-Channel QFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
2026+ |
TO220F |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
onsemi(安森美) |
25+ |
TO-220F-3 |
22412 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
ON/安森美 |
24+ |
SMD |
860000 |
明嘉莱只做原装正品现货 |
|||
FAIRCHILD/仙童 |
21+ |
TO220F |
1709 |
||||
FAIRCHILD |
23+ |
TO-220F |
3000 |
原装正品假一罚百!可开增票! |
|||
仙童 |
06+ |
TO-220F |
3000 |
原装 |
|||
Fairchild(飞兆/仙童) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
FCS |
26+ |
WSON12 |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
FAIRCHIL |
25+ |
TO220 |
3000 |
全新原装、诚信经营、公司现货销售 |
|||
VBSEMI/微碧半导体 |
24+ |
TO-220F |
7800 |
全新原厂原装正品现货,低价出售,实单可谈 |
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