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FQP6N80价格
参考价格：￥3.0623
型号：FQP6N80C 品牌：FAIRCHILD 备注：这里有FQP6N80多少钱，2025年最近7天走势，今日出价，今日竞价，FQP6N80批发/采购报价，FQP6N80行情走势销售排行榜，FQP6N80报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FQP6N80 | 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are product using Fairchilds proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan | Fairchild 仙童半导体 |   | |
FQP6N80 | 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | ONSEMI 安森美半导体 | | |
FQP6N80 | 800V N-Channel MOSFET | ONSEMI 安森美半导体 | | |
N-Channel QFET짰 MOSFET 800 V, 5.5 A, 2.5 廓 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av | Fairchild 仙童半导体 | | ||
800V N-Channel MOSFET Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av | Fairchild 仙童半导体 | | ||
N-Channel QFET MOSFET 文件：855.56 Kbytes Page：10 Pages | Fairchild 仙童半导体 | | ||
isc N-Channel MOSFET Transistor 文件：306.33 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
功率 MOSFET，N 沟道，QFET®，800 V，5.5 A，2.5 Ω，TO-220 | ONSEMI 安森美半导体 | | ||
N-Channel QFET MOSFET 文件：855.56 Kbytes Page：10 Pages | Fairchild 仙童半导体 | | ||
N-Channel Enhancement Mode Standard Power MOSFET N-Channel Enhancement Mode Features ● International standard packages ● Low RDS (on) HDMOSTM process ● Rugged polysilicon gate cell structure ● Low package inductance ( | IXYS 艾赛斯 | | ||
6.0 Amps, 800 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC6N80 is a N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse | UTC 友顺 | | ||
N-Channel Power MOSFET 文件：398.49 Kbytes Page：8 Pages | NELLSEMI 尼尔半导体 | | ||
Simple Drive Requirements 文件：61.06 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
6A, 800V N-CHANNEL POWER MOSFET 文件：199.62 Kbytes Page：6 Pages | UTC 友顺 | |
FQP6N80产品属性
- 类型
描述
- 型号
FQP6N80
- 功能描述
MOSFET 800V N-Channel QFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD |
24+ |
TO-220 |
27500 |
原装正品,价格最低! |
|||
FAIRCHILD |
23+ |
NA |
6500 |
全新原装假一赔十 |
|||
FAIRCHILD/仙童 |
25+ |
TO-220 |
74 |
原装正品,假一罚十! |
|||
FAIRCHILD/仙童 |
25+ |
TO-220 |
45000 |
FAIRCHILD/仙童全新现货FQP6N80C即刻询购立享优惠#长期有排单订 |
|||
FSC |
24+ |
TO-220 |
532 |
全新原装环保现货 |
|||
FSC |
23+ |
TO-220 |
5500 |
现货,全新原装 |
|||
30 |
220 |
FAIRCHILD/仙童 |
8 |
92 |
|||
FAIRCHILD |
25+ |
NA |
80 |
全新原装!优势库存热卖中! |
|||
仙童 |
05+ |
TO-220 |
5000 |
原装进口 |
|||
FAIRCHILD/仙童 |
25+ |
TO-220 |
880000 |
明嘉莱只做原装正品现货 |
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FQP6N80规格书下载地址
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DdatasheetPDF页码索引
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