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FQP6N80C中文资料
FQP6N80C数据手册规格书PDF详情
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features
• 5.5 A, 800 V, RDS(on) = 2.5 Ω (Max.) @ VGS = 10 V, ID = 2.75 A
• Low Gate Charge (Typ. 21 nC)
• Low Crss (Typ. 8 pF)
• 100 Avalanche Tested
FQP6N80C产品属性
- 类型
描述
- 型号
FQP6N80C
- 功能描述
MOSFET 800V N-Ch Q-FET advance C-Series
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
24+ |
TO-220AB |
10000 |
只做原装欢迎含税交易,假一赔十,放心购买 |
|||
FAIRCHILD/仙童 |
25+ |
TO-220 |
45000 |
FAIRCHILD/仙童全新现货FQP6N80C即刻询购立享优惠#长期有排单订 |
|||
FAIRCHILD |
2013 |
NA |
80 |
全新原装!优势库存热卖中! |
|||
FAIRCHILD |
23+ |
TO-220 |
3000 |
原装正品假一罚百!可开增票! |
|||
FAIRCHILD |
24+ |
TO-220 |
1526 |
全新原装环保 |
|||
FAIRCHILD |
23+ |
NA |
20000 |
全新原装假一赔十 |
|||
FAIRCHILD |
2023+ |
TO-220 |
5800 |
进口原装,现货热卖 |
|||
FAIRCHILD |
2025+ |
TO-220 |
3685 |
全新原厂原装产品、公司现货销售 |
|||
FAIRCHILD |
2405+ |
原厂封装 |
12500 |
15年芯片行业经验/只供原装正品:0755-83267371邹小姐 |
|||
FAIRCHILD/仙童 |
24+ |
NA/ |
58600 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
FQP6N80C 价格
参考价格：￥3.0623
FQP6N80C 资料下载更多...
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FAIRCHILD相关芯片制造商
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