600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and with

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=4.5A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) =2.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

功率 MOSFET，N 沟道，QFET®，600 V，4.5 A，2.5 Ω，TO-220

4.5 Amps, 600 Volts N-CHANNEL MOSFET

DESCRIPTION The UTC 5N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching application

4.5 Amps, 600/650 Volts N-CHANNEL MOSFET

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5A, 600V N-CHANNEL POWER MOSFET

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Power MOSFET

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N-Channel Power MOSFET

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