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型号 功能描述 生产厂家 企业 LOGO 操作
5N60

4.5 Amps, 600 Volts N-CHANNEL MOSFET

DESCRIPTION The UTC 5N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching application

UTC

友顺

5N60

5A, 600V N-CHANNEL POWER MOSFET

The UTC 5N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies • RDS(ON) = 2.2Ω @VGS = 10 V \n• Ultra Low Gate Charge ( Typical 15 nC )   \n• Low Reverse Transfer Capacitance ( CRSS = Typical 6.5 pF ) \n• Fast Switching Capability \n• Avalanche Energy Specified;

UTC

友顺

5N60

N-CHANNEL MOSFET

文件:500.1 Kbytes Page:6 Pages

ZSELEC

淄博圣诺

5N60

N-Channel Power MOSFET

文件:396.63 Kbytes Page:8 Pages

NELLSEMI

尼尔半导体

5N60

N-CHANNEL POWER MOSFET

文件:2.03879 Mbytes Page:8 Pages

SUNMATE

森美特

5N60

Avalanche Energy Specified

文件:157.21 Kbytes Page:2 Pages

ISC

无锡固电

5N60

Power MOSFET

文件:1.06579 Mbytes Page:9 Pages

VBSEMI

微碧半导体

5N60

4.5 Amps, 600/650 Volts N-CHANNEL MOSFET

文件:242.68 Kbytes Page:6 Pages

UTC

友顺

5N60

5A, 600V N-CHANNEL POWER MOSFET

文件:254.02 Kbytes Page:6 Pages

UTC

友顺

丝印代码:5N60AT;5A 600V N-channel enhanced field effect transistor

文件:1.0671 Mbytes Page:7 Pages

YFWDIODE

佑风微

丝印代码:5N60AF;5A 600V N-channel enhanced field effect transistor

文件:1.0671 Mbytes Page:7 Pages

YFWDIODE

佑风微

丝印代码:5N60AS;5A 600V N-channel enhanced field effect transistor

文件:1.0671 Mbytes Page:7 Pages

YFWDIODE

佑风微

丝印代码:5N60AS;5A 600V N-channel enhanced field effect transistor

文件:1.0671 Mbytes Page:7 Pages

YFWDIODE

佑风微

丝印代码:5N60AMJ;5A 600V N-channel enhanced field effect transistor

文件:1.0671 Mbytes Page:7 Pages

YFWDIODE

佑风微

丝印代码:5N60AD;5A 600V N-channel enhanced field effect transistor

文件:1.0671 Mbytes Page:7 Pages

YFWDIODE

佑风微

600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w

FAIRCHILD

仙童半导体

4.5 Amps, 600 Volts N-CHANNEL MOSFET

DESCRIPTION The UTC 5N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching application

UTC

友顺

4.5 Amps, 600 Volts N-CHANNEL MOSFET

DESCRIPTION The UTC 5N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching application

UTC

友顺

4.5 Amps, 600 Volts N-CHANNEL MOSFET

DESCRIPTION The UTC 5N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching application

UTC

友顺

4.5 Amps, 600 Volts N-CHANNEL MOSFET

DESCRIPTION The UTC 5N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching application

UTC

友顺

5A, 600V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 5N60-TC2 is a N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the

UTC

友顺

4.5 Amps, 600 Volts N-CHANNEL MOSFET

DESCRIPTION The UTC 5N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching application

UTC

友顺

4.5 Amps, 600/650 Volts N-CHANNEL MOSFET

文件:242.68 Kbytes Page:6 Pages

UTC

友顺

5A, 600V N-CHANNEL POWER MOSFET

文件:254.02 Kbytes Page:6 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:329.96 Kbytes Page:7 Pages

UTC

友顺

isc N-Channel MOSFET Transistor

文件:168.29 Kbytes Page:2 Pages

ISC

无锡固电

5A 600V N-channel enhanced field effect transistor

文件:1.0671 Mbytes Page:7 Pages

YFWDIODE

佑风微

N-CHANNEL POWER MOSFET

文件:2.03879 Mbytes Page:8 Pages

SUNMATE

森美特

N-CHANNEL POWER MOSFET

文件:2.03879 Mbytes Page:8 Pages

SUNMATE

森美特

MOS管

ZG

高压MOSFET

PINGWEI

N-CHANNEL POWER MOSFET

文件:2.03879 Mbytes Page:8 Pages

SUNMATE

森美特

N-CHANNEL POWER MOSFET

文件:329.96 Kbytes Page:7 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:329.96 Kbytes Page:7 Pages

UTC

友顺

5A, 600V N-CHANNEL POWER MOSFET

文件:254.02 Kbytes Page:6 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:329.96 Kbytes Page:7 Pages

UTC

友顺

5A, 600V N-CHANNEL POWER MOSFET

文件:254.02 Kbytes Page:6 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:329.96 Kbytes Page:7 Pages

UTC

友顺

5A, 600V N-CHANNEL POWER MOSFET

文件:254.02 Kbytes Page:6 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:329.96 Kbytes Page:7 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:329.96 Kbytes Page:7 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:329.96 Kbytes Page:7 Pages

UTC

友顺

5A, 600V N-CHANNEL POWER MOSFET

文件:254.02 Kbytes Page:6 Pages

UTC

友顺

5A, 600V N-CHANNEL POWER MOSFET

文件:254.02 Kbytes Page:6 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:329.96 Kbytes Page:7 Pages

UTC

友顺

5A, 600V N-CHANNEL POWER MOSFET

文件:254.02 Kbytes Page:6 Pages

UTC

友顺

4.5 Amps, 600/650 Volts N-CHANNEL MOSFET

文件:242.68 Kbytes Page:6 Pages

UTC

友顺

4.5 Amps, 600/650 Volts N-CHANNEL MOSFET

文件:242.68 Kbytes Page:6 Pages

UTC

友顺

4.5 Amps, 600/650 Volts N-CHANNEL MOSFET

文件:242.68 Kbytes Page:6 Pages

UTC

友顺

4.5 Amps, 600/650 Volts N-CHANNEL MOSFET

文件:242.68 Kbytes Page:6 Pages

UTC

友顺

4.5 Amps, 600/650 Volts N-CHANNEL MOSFET

文件:242.68 Kbytes Page:6 Pages

UTC

友顺

4.5 Amps, 600/650 Volts N-CHANNEL MOSFET

文件:242.68 Kbytes Page:6 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:2.03879 Mbytes Page:8 Pages

SUNMATE

森美特

N-CHANNEL POWER MOSFET

文件:273.18 Kbytes Page:7 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:273.18 Kbytes Page:7 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:273.18 Kbytes Page:7 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:273.18 Kbytes Page:7 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:273.18 Kbytes Page:7 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:273.18 Kbytes Page:7 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:273.18 Kbytes Page:7 Pages

UTC

友顺

5N60产品属性

  • 类型

    描述

  • Vdss(V):

    650

  • Vgss(V):

    30

  • Id(A):

    4.5

  • Package:

    TO-251/TO-252/TO-220...

更新时间:2026-5-22 22:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
AAT
23+
TO-220/F
12000
全新原装假一赔十
UTC/友顺
26+
TO-220F
20000
100%原装正品假一罚十
TO-220
23+
NA
15659
振宏微专业只做正品,假一罚百!
RENESAS
原厂封装
9800
原装进口公司现货假一赔百
SYFOREVER
25+
TO-220F
20300
SYFOREVER原装特价5N60FC即刻询购立享优惠#长期有货
士兰微
21+
TO-220
425300
PHI
23+
TO-263
40000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
UTC/友顺
2540+
TO-220F
8595
只做原装正品假一赔十为客户做到零风险!!
UTC
24+
TO220
6000
深圳原装现货价格优势
士兰微
21+
TO-220
880000
明嘉莱只做原装正品现货

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