| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
PowerMOSFET(Vdss=150V,Rds(on)max=0.032ohm,Id=50A) Benefits •LowGate-to-DrainChargetoReduceSwitchingLosses •FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) •FullyCharacterizedAvalancheVoltageandCurrent Applications •HighfrequencyDC-DCconverters | IRF International Rectifier |  |   | |
PowerMOSFET(Vdss=150V,Rds(on)max=0.032ohm,Id=50A) Benefits •LowGate-to-DrainChargetoReduceSwitchingLosses •FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) •FullyCharacterizedAvalancheVoltageandCurrent Applications •HighfrequencyDC-DCconverters | IRF International Rectifier | | | |
PowerMOSFET(Vdss=150V,Rds(on)max=0.032ohm,Id=50A) Benefits •LowGate-to-DrainChargetoReduceSwitchingLosses •FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) •FullyCharacterizedAvalancheVoltageandCurrent Applications •HighfrequencyDC-DCconverters | IRF International Rectifier | | | |
N-ChannelMOSFETTransistor 文件：338.75 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
N-ChannelMOSFETTransistor 文件：335.27 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
原厂封装 |
280 |
原装现货假一罚十 |
|||
IR/VISHAY |
24+ |
NA/ |
32365 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
Infineon(英飞凌) |
24+ |
TO-220 |
12548 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
IR |
2015+ |
TO-220 |
19889 |
一级代理原装现货,特价热卖! |
|||
INFINEON |
21+ |
TO-220 |
5000 |
全新原装公司现货
|
|||
IR |
24+ |
TO-220 |
20540 |
保证进口原装现货假一赔十 |
|||
IR |
23+ |
TO-220 |
22000 |
原装现货假一罚十 |
|||
INFINEON |
2430+ |
TO-220 |
8540 |
只做原装正品假一赔十为客户做到零风险!! |
|||
Infineon Technologies |
24+ |
TO-220AB |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
INFINEON |
24+ |
TO-220 |
12000 |
原装 |
FQP52N15芯片相关品牌
FQP52N15规格书下载地址
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FQP52N15数据表相关新闻
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2019-11-8
DdatasheetPDF页码索引
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