| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 100V, 50A, RDS(ON) = 30mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package. ■ Lead free product is acquired. | CET 华瑞 |   | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 50A, RDS(ON) = 30mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 50A, RDS(ON) = 30mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 100V, 50A, RDS(ON) = 30mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package. ■ Lead free product is acquired. | CET 华瑞 | | ||
N-CHANNEL MOSFET in a TO-220 Plastic Package 文件：866.59 Kbytes Page：6 Pages | FOSHAN 蓝箭电子 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CET |
21+ |
TO-220 |
445 |
原装现货假一赔十 |
|||
CET/華瑞 |
25+ |
TO-220 |
156730 |
明嘉莱只做原装正品现货 |
|||
CET |
NA |
8560 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
CET |
23+ |
TO220/3 |
7000 |
绝对全新原装!100%保质量特价!请放心订购! |
|||
CET |
24+ |
TO2203 |
655 |
||||
SR |
23+ |
TO-220 |
5000 |
原装正品,假一罚十 |
|||
CET |
25+ |
TO-220 |
53790 |
原装正品,假一罚十! |
|||
CET |
23+ |
TO-220 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
CET |
25+ |
TO-TO-220 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
CET |
23+ |
原厂原包 |
19960 |
只做进口原装 终端工厂免费送样 |
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DdatasheetPDF页码索引
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