500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are product using Fairchilds proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=3.4A@ TC=25℃ ·Drain Source Voltage -VDSS=500V(Min) ·Static Drain-Source On-Resistance -RDS(on) =2.7Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

500V N-Channel MOSFET

500V N-Channel MOSFET

500V N-Channel MOSFET

Features • 3.4A, 500V, RDS(on) = 2.7Ω @VGS = 10 V • Low gate charge ( typical 10 nC) • Low Crss ( typical 6.0 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

PowerMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power Supplies

PowerMOS transistor Isolated version of PHP4N50E

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Pow

TMOS POWER FET 4.0 AMPERES 500 VOLTS RDSon = 1.5 OHMS

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