600V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=3.0A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) =3.4Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

功率 MOSFET，N 沟道，QFET®，600 V，3 A，3.4 Ω，TO-220

3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 3N60 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching app

3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

文件：363.66 Kbytes Page：8 Pages

N-Channel Power MOSFET

文件：442.29 Kbytes Page：9 Pages

Fast Switching

文件：49.9 Kbytes Page：2 Pages

N-Channel 650 V (D-S) MOSFET

文件：1.08665 Mbytes Page：9 Pages