100V N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

功率 MOSFET，N 沟道，QFET®，100 V，12.8 A，180 mΩ，TO-220

该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关模式电源、音频放大器、直流电机控制和可变开关电源应用。 •12.8A, 100V, RDS(on)= 180mΩ（最大值）@VGS = 10 V, ID = 6.4A栅极电荷低（典型值：12nC)\n•低 Crss（典型值20pF)\n•100% 经过雪崩击穿测试\n•175°C最大结温额定值\"\n• 175°C maximum junction temperature rating;

isc N-Channel MOSFET Transistor

文件：284.13 Kbytes Page：2 Pages

100V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

功率 MOSFET，N 沟道，逻辑电平，QFET®，100 V，12.8 A，180 mΩ，TO-220

该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关模式电源、音频放大器、直流电机控制和可变开关电源应用。 •12.8A, 100V, RDS(on)= 180mΩ（最大值）@VGS = 10 V, ID = 6.4A栅极电荷低（典型值：8.7nC)\n•低 Crss（典型值20pF)\n•100% 经过雪崩击穿测试\n•175°C最大结温额定值\"\n• 175°C maximum junction temperature rating;

isc N-Channel MOSFET Transistor

文件：319.04 Kbytes Page：2 Pages

100V LOGIC N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high a

100V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and with

100V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

100V N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high