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FQP12N60价格
参考价格：￥5.0717
型号：FQP12N60C 品牌：FAIRCHILD 备注：这里有FQP12N60多少钱，2026年最近7天走势，今日出价，今日竞价，FQP12N60批发/采购报价，FQP12N60行情走势销售排行榜，FQP12N60报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FQP12N60 | 600V N-Channel MOSFET DESCRIPTION These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary,planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy | TGS |   | |
FQP12N60 | 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FAIRCHILD 仙童半导体 | | |
FQP12N60 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=10.5A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.7Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | |
FQP12N60 | 600V N-Channel MOSFET | ONSEMI 安森美半导体 | | |
FQP12N60C/FQPF12N60C Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology hasbeen especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig | FAIRCHILD 仙童半导体 | | ||
600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Corise Semiconductorÿs proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance | KERSEMI | | ||
600V N-Channel MOSFET 文件：1.43803 Mbytes Page：10 Pages | FAIRCHILD 仙童半导体 | | ||
功率 MOSFET，N 沟道，QFET®， 600 V，12 A，650 mΩ，TO-220 | ONSEMI 安森美半导体 | | ||
600V N-Channel MOSFET 文件：1.12119 Mbytes Page：10 Pages | FAIRCHILD 仙童半导体 | | ||
600V N-Channel MOSFET 文件：1.12119 Mbytes Page：10 Pages | FAIRCHILD 仙童半导体 | | ||
12 Amps, 600/650 Volts N-CHANNEL MOSFET The UTC 12N60are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced using UTCs proprietary, planar stripe, DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, provide superior switching p | UTC 友顺 | | ||
12 Amps, 600/650 Volts N-CHANNEL MOSFET 文件：358.2 Kbytes Page：7 Pages | UTC 友顺 | | ||
12A 600V N-channel Enhancement Mode Power MOSFET 文件：897.58 Kbytes Page：11 Pages | WXDH 东海半导体 | | ||
12A 600V N-channel Enhancement Mode Power MOSFET 文件：898.09 Kbytes Page：11 Pages | WXDH 东海半导体 | | ||
12A 600V N-channel Enhancement Mode Power MOSFET 文件：897.54 Kbytes Page：11 Pages | WXDH 东海半导体 | |
FQP12N60产品属性
- 类型
描述
- 型号
FQP12N60
- 功能描述
MOSFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
25+ |
TO-220-3 |
22412 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
onsemi(安森美) |
25+ |
TO-220-3 |
22412 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
FSC |
2016+ |
TO220 |
6000 |
公司只做原装,假一罚十,可开17%增值税发票! |
|||
HJ替代 |
2011+ |
TO220 |
50000 |
全新原装进口自己库存优势 |
|||
FCS |
24+ |
TO 220 |
156076 |
明嘉莱只做原装正品现货 |
|||
F |
23+ |
65480 |
|||||
FAIRCHILD |
400 |
2008 |
41 |
原厂原装 |
|||
FAIRCHILD/仙童 |
2450+ |
TO-220 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
FSC |
26+ |
原厂原封装 |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
FAIRCHILD |
25+ |
TO220 |
3000 |
全新原装、诚信经营、公司现货销售 |
FQP12N60规格书下载地址
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DdatasheetPDF页码索引
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