位置：首页 > IC中文资料第3076页 > FQI7N10TU
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FQI7N10TU | MOSFET N-CH 100V 7.3A I2PAK | ONSEMI 安森美半导体 |   | |
100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand h | FAIRCHILD 仙童半导体 | | ||
100V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi | FAIRCHILD 仙童半导体 | | ||
100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand h | FAIRCHILD 仙童半导体 | | ||
100V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi | FAIRCHILD 仙童半导体 | | ||
100V LOGIC N-Channel MOSFET Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high | FAIRCHILD 仙童半导体 | |
FQI7N10TU产品属性
- 类型
描述
- 型号
FQI7N10TU
- 功能描述
MOSFET N-CH/100V/7.3A/0.35OHM
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi |
25+ |
I2PAK(TO-262) |
21000 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
onsemi |
25+ |
I2PAK(TO-262) |
21000 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
FAIRCHILD |
2016+ |
TO-262 |
5254 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
FAIRCHILD/仙童 |
2026+ |
I2-PAKTO-262 |
54558 |
百分百原装现货 实单必成 欢迎询价 |
|||
FAIRCHILD/仙童 |
24+ |
TO-262 |
990000 |
明嘉莱只做原装正品现货 |
|||
24+ |
TO-262 |
9860 |
原装现货/放心购买 |
||||
FAIRCHILD/仙童 |
21+ |
I2-PAKTO-262 |
30000 |
优势供应 实单必成 可13点增值税 |
|||
FAIRCHILD/仙童 |
2450+ |
TO-262 |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
FAIRCHILD |
25+23+ |
TO-262 |
14406 |
绝对原装正品全新进口深圳现货 |
|||
FAIRCHILD |
25+ |
TO220 |
30000 |
代理全新原装现货,价格优势 |
FQI7N10TU规格书下载地址
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DdatasheetPDF页码索引
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