位置：首页 > IC中文资料第1273页 > FQB7N10
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FQB7N10 | 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand h | FAIRCHILD 仙童半导体 |   | |
FQB7N10 | 100V N-Channel MOSFET | ONSEMI 安森美半导体 | | |
100V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi | FAIRCHILD 仙童半导体 | | ||
100V LOGIC N-Channel MOSFET | ONSEMI 安森美半导体 | | ||
100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand h | FAIRCHILD 仙童半导体 | | ||
100V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi | FAIRCHILD 仙童半导体 | | ||
100V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi | FAIRCHILD 仙童半导体 | | ||
100V LOGIC N-Channel MOSFET Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high | FAIRCHILD 仙童半导体 | |
FQB7N10产品属性
- 类型
描述
- 型号
FQB7N10
- 功能描述
MOSFET 100V N-Ch QFET Logic Level
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
25+ |
D2PAK(TO-263) |
21000 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
onsemi(安森美) |
25+ |
D2PAK(TO-263) |
21000 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
FAIRCHILD/仙童 |
2026+ |
D2-PAKTO-263 |
54558 |
百分百原装现货 实单必成 欢迎询价 |
|||
Fairchild/ON |
22+ |
TO2633 D2Pak (2 Leads + Tab) T |
9000 |
原厂渠道,现货配单 |
|||
FAIRCHILD |
0311+ |
TO263 |
1580 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
FSC |
24+ |
NA |
27003 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
FAIRCHILD/仙童 |
21+ |
D2-PAKTO-263 |
30000 |
优势供应 实单必成 可13点增值税 |
|||
FAIRCHI |
25+ |
TO263 |
1580 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
FAIRCILD |
22+ |
TO-263 |
8000 |
原装正品支持实单 |
|||
FAIRCHILD |
24+ |
TO-263 |
8866 |
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FQB7N10规格书下载地址
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2019-8-15
DdatasheetPDF页码索引
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