位置：首页 > IC中文资料第6855页 > FQI12N60
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FQI12N60 | 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FAIRCHILD 仙童半导体 |   | |
600V N-Channel MOSFET Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology hasbeen especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig | FAIRCHILD 仙童半导体 | | ||
600V N-Channel MOSFET Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology hasbeen especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig | FAIRCHILD 仙童半导体 | | ||
MOSFET N-CH 600V 12A I2PAK | ONSEMI 安森美半导体 | | ||
MOSFET N-CH 600V 10.5A I2PAK | ONSEMI 安森美半导体 | | ||
600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FAIRCHILD 仙童半导体 | | ||
600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FAIRCHILD 仙童半导体 | | ||
600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FAIRCHILD 仙童半导体 | | ||
600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FAIRCHILD 仙童半导体 | |
FQI12N60产品属性
- 类型
描述
- 型号
FQI12N60
- 制造商
FAIRCHILD
- 制造商全称
Fairchild Semiconductor
- 功能描述
600V N-Channel MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD |
24+ |
TO-262 |
8866 |
||||
Fairchild/ON |
22+ |
TO2623 Long Leads I2Pak TO262A |
9000 |
原厂渠道,现货配单 |
|||
FAIRCHILD/仙童 |
23+ |
TO-262-3 |
50000 |
全新原装正品现货,支持订货 |
|||
onsemi(安森美) |
25+ |
I2PAK(TO-262) |
18798 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
FAIRCHILD/仙童 |
2026+ |
TO-262-3 |
100 |
原装正品,假一罚十! |
|||
FAIRCHILD/仙童 |
23+ |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
||||
仙童 |
06+ |
TO-262 |
2500 |
原装 |
|||
FSC/ON |
23+ |
原包装原封 □□ |
627 |
原装进口特价供应 特价，原装元器件供应，支持开发样品 更多详细咨询 库存 |
|||
FAIRCHILD/仙童 |
24+ |
TO220-3 |
3580 |
原装现货/15年行业经验欢迎询价 |
|||
FAIRCHILD |
2023+ |
SMD |
6433 |
安罗世纪电子只做原装正品货 |
FQI12N60规格书下载地址
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DdatasheetPDF页码索引
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