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型号 功能描述 生产厂家 企业 LOGO 操作
FQPF12N60

600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

FAIRCHILD

仙童半导体

FQPF12N60

600V N-Channel MOSFET

文件:1.43803 Mbytes Page:10 Pages

FAIRCHILD

仙童半导体

FQP12N60C/FQPF12N60C

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology hasbeen especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

FAIRCHILD

仙童半导体

600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Corise Semiconductorÿs proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance

KERSEMI

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=12A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.65Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

isc Silicon NPN Power Transistor

FEATURES ·Drain Current -ID=12A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.65Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

600V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology hasbeen especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

FAIRCHILD

仙童半导体

600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

FAIRCHILD

仙童半导体

功率 MOSFET,N 沟道,QFET®,600 V,12 A,650 mΩ,TO-220F

ONSEMI

安森美半导体

600V N-Channel MOSFET

文件:1.12119 Mbytes Page:10 Pages

FAIRCHILD

仙童半导体

600V N-Channel MOSFET

文件:1.43803 Mbytes Page:10 Pages

FAIRCHILD

仙童半导体

600V N-Channel MOSFET

ONSEMI

安森美半导体

600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

FAIRCHILD

仙童半导体

600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

FAIRCHILD

仙童半导体

600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

FAIRCHILD

仙童半导体

600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

FAIRCHILD

仙童半导体

FQPF12N60产品属性

  • 类型

    描述

  • 型号

    FQPF12N60

  • 功能描述

    MOSFET

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-3-19 9:17:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
仙童
05+
TO-220F
4000
原装进口
FSC
2025+
TO220
3536
全新原厂原装产品、公司现货销售
FSC/ON
23+
原包装原封□□
55453
原装进口特价供应特价,原装元器件供应,支持开发样品更多详细咨询库存
FSC
24+/25+
TO-220F
7
原装正品现货库存价优
FSC
2012
TO-220F
3
全新原装正品现货
FAIRCHILD/仙童
25+
TO-220F
45000
FAIRCHILD/仙童全新现货FQPF12N60C即刻询购立享优惠#长期有排单订
FAIRCHILD
04+
TO220
629
原装正品
FSC
2012+
原装正品
10000
全新原装,公司大量现货供应,绝对正品
FSC
23+
TO220
3000
原装正品假一罚百!可开增票!
FAIRCHILD
23+
TO-220F
50000
全新原装正品现货,支持订货

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