型号 功能描述 生产厂家&企业 LOGO 操作
FQPF12N60

600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
FQPF12N60

600V N-Channel MOSFET

文件:1.43803 Mbytes Page:10 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FQP12N60C/FQPF12N60C

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology hasbeen especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Corise Semiconductorÿs proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=12A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.65Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc Silicon NPN Power Transistor

FEATURES ·Drain Current -ID=12A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.65Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

600V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology hasbeen especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

600V N-Channel MOSFET

文件:1.12119 Mbytes Page:10 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

600V N-Channel MOSFET

文件:1.43803 Mbytes Page:10 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

12 Amps, 600/650 Volts N-CHANNEL MOSFET

The UTC 12N60are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced using UTCs proprietary, planar stripe, DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, provide superior switching p

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

12 Amps, 600/650 Volts N-CHANNEL MOSFET

文件:358.2 Kbytes Page:7 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

12A 600V N-channel Enhancement Mode Power MOSFET

文件:897.58 Kbytes Page:11 Pages

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

东海半导体江苏东海半导体股份有限公司

WXDH

12A 600V N-channel Enhancement Mode Power MOSFET

文件:898.09 Kbytes Page:11 Pages

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

东海半导体江苏东海半导体股份有限公司

WXDH

12A 600V N-channel Enhancement Mode Power MOSFET

文件:897.54 Kbytes Page:11 Pages

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

东海半导体江苏东海半导体股份有限公司

WXDH

FQPF12N60产品属性

  • 类型

    描述

  • 型号

    FQPF12N60

  • 功能描述

    MOSFET

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-8-5 12:20:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FAIRCHILD/仙童
22+
TO220F
36293
原装正品现货
ON/安森美
23+
TO-220F(TO-220IS)
8080
正规渠道,只有原装!
FAIRCHILD/仙童
24+
TO-220F
6000
全新原装,一手货源,全场热卖!
ON
25+
TO-220F
1000
原厂原装,价格优势
FSC
24+
TO-220F
626
全新原装环保现货
FAIRCHILD/仙童
2023+
TO-220F
6893
专注全新正品,优势现货供应
FSC
TO-220F
56520
一级代理 原装正品假一罚十价格优势长期供货
FSC
2012
TO-220F
3
全新原装正品现货
FAIRCHILD
24+
TO-220F
20540
保证进口原装现货假一赔十
FAIRCHILD/仙童
24+
TO-220F
9600
原装现货,优势供应,支持实单!

FQPF12N60芯片相关品牌

  • CHENDA
  • FRANCEJOINT
  • HARWIN
  • IRF
  • Ricoh
  • SCHURTER
  • Semikron
  • Sensata
  • SICK
  • SKYWORKS
  • TDK
  • TOCOS

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