位置：首页 > IC中文资料第6852页 > FQB12N60
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FQB12N60 | 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |   | |
FQB12N60 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=10.5A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.7Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co | ISC 无锡固电 | | |
FQB12N60 | 600V N-Channel MOSFET | ONSEMI 安森美半导体 | | |
600V N-Channel MOSFET Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology hasbeen especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
600V N-Channel MOSFET Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology hasbeen especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
600V N-Channel MOSFET Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology hasbeen especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
600V N-Channel MOSFET | ONSEMI 安森美半导体 | | ||
12 Amps, 600/650 Volts N-CHANNEL MOSFET The UTC 12N60are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced using UTCs proprietary, planar stripe, DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, provide superior switching p | UTC 友顺 | | ||
12 Amps, 600/650 Volts N-CHANNEL MOSFET 文件：358.2 Kbytes Page：7 Pages | UTC 友顺 | | ||
12A 600V N-channel Enhancement Mode Power MOSFET 文件：897.58 Kbytes Page：11 Pages | WXDH 东海半导体 | | ||
12A 600V N-channel Enhancement Mode Power MOSFET 文件：898.09 Kbytes Page：11 Pages | WXDH 东海半导体 | | ||
12A 600V N-channel Enhancement Mode Power MOSFET 文件：897.54 Kbytes Page：11 Pages | WXDH 东海半导体 | |
FQB12N60产品属性
- 类型
描述
- 型号
FQB12N60
- 制造商
FAIRCHILD
- 制造商全称
Fairchild Semiconductor
- 功能描述
600V N-Channel MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRC |
2023+ |
TO-263(D2PAK |
50000 |
原装现货 |
|||
FAIRC |
24+ |
TO-263 |
90000 |
一级代理商进口原装现货、价格合理 |
|||
FAIRCHILD/仙童 |
23+ |
SOT263 |
8000 |
只做原装现货 |
|||
仙童 |
06+ |
TO-263 |
3800 |
原装 |
|||
FAI |
25+23+ |
TO263 |
75621 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
VBsemi |
24+ |
TO263 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
FAIRCHILD |
24+ |
TO-263 |
8866 |
||||
ON |
21+ |
TO-263 |
100 |
原装现货假一赔十 |
|||
FAIRCHILD/仙童 |
20+ |
TO-263 |
38900 |
原装优势主营型号-可开原型号增税票 |
|||
FAIRCILD |
22+ |
TO-263 |
8000 |
原装正品支持实单 |
FQB12N60规格书下载地址
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FQB12N60数据表相关新闻
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原装正品现货供应 0755-28892389/13713856319；QQ:2639752116；微信：13713856319；
2021-3-25FQA9N90C
FQA9N90C，全新原装当天发货或门市自取0755-82732291.
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随时可发货
2019-9-17
DdatasheetPDF页码索引
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