位置：首页 > IC中文资料第6852页 > FQB12N60
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
FQB12N60 | 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  |   |
FQB12N60 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=10.5A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.7Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
600V N-Channel MOSFET Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology hasbeen especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
600V N-Channel MOSFET Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology hasbeen especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
600V N-Channel MOSFET Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology hasbeen especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
12 Amps, 600/650 Volts N-CHANNEL MOSFET The UTC 12N60are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced using UTCs proprietary, planar stripe, DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, provide superior switching p | UTCUnisonic Technologies 友顺友顺科技股份有限公司 |  | | |
12 Amps, 600/650 Volts N-CHANNEL MOSFET 文件：358.2 Kbytes Page：7 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
12A 600V N-channel Enhancement Mode Power MOSFET 文件：897.58 Kbytes Page：11 Pages | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体股份有限公司 |  | | |
12A 600V N-channel Enhancement Mode Power MOSFET 文件：898.09 Kbytes Page：11 Pages | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体股份有限公司 | | | |
12A 600V N-channel Enhancement Mode Power MOSFET 文件：897.54 Kbytes Page：11 Pages | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体股份有限公司 | | |
FQB12N60产品属性
- 类型
描述
- 型号
FQB12N60
- 制造商
FAIRCHILD
- 制造商全称
Fairchild Semiconductor
- 功能描述
600V N-Channel MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAI |
25+23+ |
TO263 |
75621 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
FAIRCHI |
23+ |
TO-263 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
VBSEMI/台湾微碧 |
23+ |
TO263 |
50000 |
全新原装正品现货,支持订货 |
|||
FAIRCHILD/仙童 |
25+ |
TO-263 |
860 |
原装正品,假一罚十! |
|||
FAIRC |
24+ |
TO-263 |
90000 |
一级代理商进口原装现货、价格合理 |
|||
FAIRCHILD/仙童 |
22+ |
TO-263 |
25000 |
只做原装进口现货,专注配单 |
|||
FAIRCHILD/仙童 |
23+ |
TO-263(D2PAK) |
104760 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
VBsemi |
21+ |
TO263 |
10065 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
VBsemi |
24+ |
TO263 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
仙童 |
06+ |
TO-263 |
3800 |
原装 |
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FQB12N60规格书下载地址
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FQB12N60数据表相关新闻
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原装正品现货供应 0755-28892389/13713856319；QQ:2639752116；微信：13713856319；
2021-3-25FQA9N90C
FQA9N90C，全新原装当天发货或门市自取0755-82732291.
2020-6-25FQA8N100C全新原装现货
随时可发货
2019-9-17
DdatasheetPDF页码索引
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