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FQD7N10价格
参考价格：￥1.3124
型号：FQD7N10LTM 品牌：Fairchild 备注：这里有FQD7N10多少钱，2026年最近7天走势，今日出价，今日竞价，FQD7N10批发/采购报价，FQD7N10行情走势销售排行榜，FQD7N10报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FQD7N10 | 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand h | FAIRCHILD 仙童半导体 |   | |
FQD7N10 | 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand h | FAIRCHILD 仙童半导体 | | |
FQD7N10 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=5.8A@ TC=25℃ ·Drain Source Voltage -VDSS=100V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.35Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | |
FQD7N10 | 100V N-Channel MOSFET Features • RDS(ON) (at VGS=10V) | UMW 友台半导体 | | |
100V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi | FAIRCHILD 仙童半导体 | | ||
N-Channel QFET짰 MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi | FAIRCHILD 仙童半导体 | | ||
N-Channel QFET MOSFET 100 V, 5.8 A, 350 m General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi | FAIRCHILD 仙童半导体 | | ||
N-Channel QFET MOSFET 100 V, 5.8 A, 350 m General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi | FAIRCHILD 仙童半导体 | | ||
100V N-Channel MOSFET Features • RDS(ON) (at VGS=10V) | UMW 友台半导体 | | ||
N-channel Enhancement Mode Power MOSFET Features VDS= 100V, ID= 18.1 A RDS(ON) | BYCHIP 百域芯 | | ||
N-Channel QFET짰 MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi | FAIRCHILD 仙童半导体 | | ||
N-channel Enhancement Mode Power MOSFET Features VDS= 100V, ID= 18.1 A RDS(ON) | BYCHIP 百域芯 | | ||
100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand h | FAIRCHILD 仙童半导体 | | ||
N-Channel 100 V (D-S) MOSFET 文件：1.01045 Mbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
N 沟道 QFET® MOSFET 100V，5.8A，350mΩ | ONSEMI 安森美半导体 | | ||
100V LOGIC N-Channel MOSFET 文件：630.73 Kbytes Page：9 Pages | FAIRCHILD 仙童半导体 | | ||
MOSFET N-CH 100V 5.8A DPAK | ONSEMI 安森美半导体 | | ||
7A, 100V N-CHANNEL POWER MOSFET 文件：224.23 Kbytes Page：6 Pages | UTC 友顺 | | ||
7 Amps, 100 Volts N-CHANNEL POWER MOSFET 文件：170.23 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：262.79 Kbytes Page：7 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：262.79 Kbytes Page：7 Pages | UTC 友顺 | | ||
7A, 100V N-CHANNEL POWER MOSFET 文件：219.08 Kbytes Page：5 Pages | UTC 友顺 | |
FQD7N10产品属性
- 类型
描述
- 型号
FQD7N10
- 制造商
FAIRCHILD
- 制造商全称
Fairchild Semiconductor
- 功能描述
100V N-Channel MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
25+ |
TO-252(DPAK) |
18798 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
FAIRCHILD/仙童 |
21+ |
TO252 |
1709 |
||||
FAIRCHILD/仙童 |
新年份 |
TO-252 |
68552 |
一级代理原装正品现货,支持实单! |
|||
ON |
TO-252 |
50000 |
|||||
FAIRCHILD |
24+ |
原厂原封 |
6523 |
进口原装公司百分百现货可出样品 |
|||
仙童 |
06+ |
TO-252 |
8000 |
原装库存 |
|||
Fairchild(飞兆/仙童) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ONSEMI/安森美 |
2517+ |
TO252 |
8850 |
只做原装正品现货或订货假一赔十! |
|||
FAIRCHILD |
26+ |
SOT-143 |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
FAIRC |
26+ |
TO-252 |
9526 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
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FQD7N10数据表相关新闻
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DdatasheetPDF页码索引
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