400V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=4.5A@ TC=25℃ ·Drain Source Voltage -VDSS=400V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

功率 MOSFET，N 沟道，QFET®，400 V，4.5 A，1.0 Ω，DPAK

该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体®的专有平面条形和 DMOS 技术生产。 这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。 这些器件适用于开关电源、有源功率因数校正（PFC）及照明灯电子镇流器。 •4.5A，400V，RDS(on)= 1.0Ω（最大值）（VGS = 10 V 且 ID = 2.25A 时）\n•低栅极电荷（典型值 16nC)\n•低 Crss（典型值 15pF)\n•100% 经过雪崩击穿测试;

400V N-Channel MOSFET

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400V N-Channel MOSFET

Features • 4.2A, 400V, RDS(on) = 1.15 Ω @VGS = 10 V • Low gate charge ( typical 13nC) • Low Crss ( typical 9.5pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

400V N-Channel MOSFET

Features • 5.5A, 400V, RDS(on) = 1.15Ω @ VGS = 10 V • Low gate charge ( typically 13 nC) • Low Crss ( typically 9.5 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

400V N-Channel MOSFET

Features • 5.5A, 400V, RDS(on) = 1.15Ω @ VGS = 10 V • Low gate charge ( typically 13 nC) • Low Crss ( typically 9.5 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

400V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

400V N-Channel MOSFET

Features • 4.2A, 400V, RDS(on) = 1.15 Ω @VGS = 10 V • Low gate charge ( typical 13nC) • Low Crss ( typical 9.5pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability