400V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=4.5A@ TC=25℃ ·Drain Source Voltage -VDSS=400V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

功率 MOSFET，N 沟道，QFET®，400 V，4.5 A，1.0 Ω，DPAK

400V N-Channel MOSFET

文件：659.83 Kbytes Page：9 Pages

400V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

6A, 400V N-CHANNEL POWER MOSFET

文件：189.38 Kbytes Page：6 Pages

6 Amps, 400 Volts N-CHANNEL POWER MOSFET

文件：169.59 Kbytes Page：6 Pages

Fast Switching Speed

文件：52.05 Kbytes Page：2 Pages

N-CHANNEL POWER MOSFET

文件：204.6 Kbytes Page：6 Pages