400V N-Channel MOSFET

Features • 5.5A, 400V, RDS(on) = 1.15Ω @ VGS = 10 V • Low gate charge ( typically 13 nC) • Low Crss ( typically 9.5 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

400V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

MOSFET N-CH 400V 6A I2PAK

400V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

6A, 400V N-CHANNEL POWER MOSFET

文件：189.38 Kbytes Page：6 Pages

6 Amps, 400 Volts N-CHANNEL POWER MOSFET

文件：169.59 Kbytes Page：6 Pages

Fast Switching Speed

文件：52.05 Kbytes Page：2 Pages

N-CHANNEL POWER MOSFET

文件：204.6 Kbytes Page：6 Pages