400V N-Channel MOSFET

Features • 4.2A, 400V, RDS(on) = 1.15 Ω @VGS = 10 V • Low gate charge ( typical 13nC) • Low Crss ( typical 9.5pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=4.2A@ TC=25℃ ·Drain Source Voltage -VDSS=400V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.15Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

400V N-Channel MOSFET

400V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

400V N-Channel MOSFET

400V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

6A, 400V N-CHANNEL POWER MOSFET

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6 Amps, 400 Volts N-CHANNEL POWER MOSFET

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Fast Switching Speed

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N-CHANNEL POWER MOSFET

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