| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 100V, 50A, RDS(ON) = 30mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package. ■ Lead free product is acquired. | CET 华瑞 |   | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 50A, RDS(ON) = 30mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired. | CET-MOS 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 50A, RDS(ON) = 30mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired. | CET-MOS 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 100V, 50A, RDS(ON) = 30mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package. ■ Lead free product is acquired. | CET 华瑞 | | ||
N-CHANNEL MOSFET in a TO-220 Plastic Package 文件：866.59 Kbytes Page：6 Pages | FOSHAN 蓝箭电子 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI |
24+ |
VQFN76 |
9480 |
公司现货库存,支持实单 |
|||
CET/華瑞 |
24+ |
NA/ |
27350 |
原装现货,当天可交货,原型号开票 |
|||
CET |
25+ |
TO-220 |
53790 |
原装正品,假一罚十! |
|||
CET |
24+ |
TO2203 |
655 |
||||
CET |
25+ |
VQFN20 |
86720 |
代理授权原装正品价格最实惠 本公司承诺假一赔百 |
|||
CET/華瑞 |
25+ |
TO-220 |
156730 |
明嘉莱只做原装正品现货 |
|||
SR |
23+ |
TO-220 |
5000 |
原装正品,假一罚十 |
|||
CET(华瑞) |
2447 |
TO-220(TO-220-3) |
105000 |
50个/管一级代理专营品牌!原装正品,优势现货,长期 |
|||
CET |
20+ |
TO-220 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
CET |
1932+ |
TO-220 |
435 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
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2019-8-29
DdatasheetPDF页码索引
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