500V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand

500V N-Channel MOSFET

文件：907.53 Kbytes Page：9 Pages

500V N-Channel MOSFET

文件：900.22 Kbytes Page：9 Pages

500V N-Channel MOSFET

500V N-Channel MOSFET

文件：907.53 Kbytes Page：9 Pages

500V N-Channel MOSFET

文件：900.22 Kbytes Page：9 Pages

500V N-Channel MOSFET

文件：907.53 Kbytes Page：9 Pages

500V N-Channel MOSFET

文件：900.22 Kbytes Page：9 Pages

500V N-Channel MOSFET

文件：907.53 Kbytes Page：9 Pages

500V N-Channel MOSFET

文件：900.22 Kbytes Page：9 Pages

Fast Switching

• FEATURES • Drain Current ID= 3A@ TC=25℃ • Drain Source Voltage- : VDSS= 500V(Min) • Static Drain-Source On-Resistance : RDS(on) = 3.0Ω (Max) • Fast Switching • APPLICATIONS • Switching power supplies,converters,AC and DC motor controls

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

DESCRIPTION The UTC 3N50K-MK is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avala

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

DESCRIPTION The UTC 3N50K-MK is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avala

3A, 500V N-CHANNEL POWER MOSFET

文件：181.85 Kbytes Page：6 Pages

3 Amps, 500 Volts N-CHANNEL POWER MOSFET

文件：173.79 Kbytes Page：6 Pages