| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
3N50 | Fast Switching • FEATURES • Drain Current ID= 3A@ TC=25℃ • Drain Source Voltage- : VDSS= 500V(Min) • Static Drain-Source On-Resistance : RDS(on) = 3.0Ω (Max) • Fast Switching • APPLICATIONS • Switching power supplies,converters,AC and DC motor controls | ISC 无锡固电 |   | |
3N50 | 3A, 500V N-CHANNEL POWER MOSFET The UTC 3N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutatio • RDS(ON)=3.2Ω @ VGS=10V \n• 100% Avalanche Tested; | UTC 友顺 | | |
3N50 | 3 Amps, 500 Volts N-CHANNEL POWER MOSFET 文件：173.79 Kbytes Page：6 Pages | UTC 友顺 | | |
3N50 | 3A, 500V N-CHANNEL POWER MOSFET 文件：181.85 Kbytes Page：6 Pages | UTC 友顺 | | |
isc N-Channel MOSFET Transistor • FEATURES • Drain Current ID= 3A@ TC=25℃ • Drain Source Voltage- : VDSS= 500V(Min) • Static Drain-Source On-Resistance : RDS(on) = 3.0Ω (Max) • Fast Switching • APPLICATIONS • Switching power supplies,converters,AC and DC motor controls | ISC 无锡固电 | | ||
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR DESCRIPTION The UTC 3N50K-MK is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avala | UTC 友顺 | | ||
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR DESCRIPTION The UTC 3N50K-MK is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avala | UTC 友顺 | | ||
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR DESCRIPTION The UTC 3N50K-MK is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avala | UTC 友顺 | | ||
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR DESCRIPTION The UTC 3N50K-MK is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avala | UTC 友顺 | | ||
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR DESCRIPTION The UTC 3N50K-MK is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avala | UTC 友顺 | | ||
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR DESCRIPTION The UTC 3N50K-MK is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avala | UTC 友顺 | | ||
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR DESCRIPTION The UTC 3N50K-MK is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avala | UTC 友顺 | | ||
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR DESCRIPTION The UTC 3N50K-MK is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avala | UTC 友顺 | | ||
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR DESCRIPTION The UTC 3N50K-MK is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avala | UTC 友顺 | | ||
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR DESCRIPTION The UTC 3N50K-MK is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avala | UTC 友顺 | | ||
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR DESCRIPTION The UTC 3N50K-MK is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avala | UTC 友顺 | | ||
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR DESCRIPTION The UTC 3N50K-MK is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avala | UTC 友顺 | | ||
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR DESCRIPTION The UTC 3N50K-MK is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avala | UTC 友顺 | | ||
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR DESCRIPTION The UTC 3N50K-MK is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avala | UTC 友顺 | | ||
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR DESCRIPTION The UTC 3N50K-MK is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avala | UTC 友顺 | | ||
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR DESCRIPTION The UTC 3N50K-MK is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avala | UTC 友顺 | | ||
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR DESCRIPTION The UTC 3N50K-MK is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avala | UTC 友顺 | | ||
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR DESCRIPTION The UTC 3N50K-MK is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avala | UTC 友顺 | | ||
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR DESCRIPTION The UTC 3N50K-MK is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avala | UTC 友顺 | | ||
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR DESCRIPTION The UTC 3N50K-MK is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avala | UTC 友顺 | | ||
3A, 500V N-CHANNEL POWER MOSFET The UTC 3N50K-MK is an N-channel mode power MOSFETusing UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commuta • RDS(ON)<3.2Ω @ VGS=10V \n• High Switching Speed \n• 100% Avalanche Tested; | UTC 友顺 | | ||
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR DESCRIPTION The UTC 3N50K-MK is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avala | UTC 友顺 | | ||
Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC | VBSEMI 微碧半导体 | | ||
isc N-Channel MOSFET Transistor • FEATURES • Drain Current ID= 3A@ TC=25℃ • Drain Source Voltage- : VDSS= 500V(Min) • Static Drain-Source On-Resistance : RDS(on) = 3.0Ω (Max) • Fast Switching • APPLICATIONS • Switching power supplies,converters,AC and DC motor controls | ISC 无锡固电 | | ||
3A, 500V N-CHANNEL POWER MOSFET The UTC 3N50Z is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-stateresistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutatio • RDS(ON)=3.2Ω @ VGS=10V\n• High Switching Speed\n• 100% Avalanche Tested; | UTC 友顺 | | ||
N-Channel 650 V (D-S) Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC | VBSEMI 微碧半导体 | | ||
3A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N50Z is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanch | UTC 友顺 | | ||
N-Channel 650 V (D-S) Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC | VBSEMI 微碧半导体 | | ||
3A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N50Z is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanch | UTC 友顺 | | ||
3A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N50Z is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanch | UTC 友顺 | | ||
3 Amps, 500 Volts N-CHANNEL POWER MOSFET 文件：173.79 Kbytes Page：6 Pages | UTC 友顺 | | ||
3A, 500V N-CHANNEL POWER MOSFET 文件：181.85 Kbytes Page：6 Pages | UTC 友顺 | | ||
3A, 500V N-CHANNEL POWER MOSFET 文件：181.85 Kbytes Page：6 Pages | UTC 友顺 | | ||
3 Amps, 500 Volts N-CHANNEL POWER MOSFET 文件：173.79 Kbytes Page：6 Pages | UTC 友顺 | | ||
3A, 500V N-CHANNEL POWER MOSFET 文件：181.85 Kbytes Page：6 Pages | UTC 友顺 | | ||
3 Amps, 500 Volts N-CHANNEL POWER MOSFET 文件：173.79 Kbytes Page：6 Pages | UTC 友顺 | | ||
3 Amps, 500 Volts N-CHANNEL POWER MOSFET 文件：173.79 Kbytes Page：6 Pages | UTC 友顺 | | ||
3A, 500V N-CHANNEL POWER MOSFET 文件：181.85 Kbytes Page：6 Pages | UTC 友顺 | | ||
3 Amps, 500 Volts N-CHANNEL POWER MOSFET 文件：173.79 Kbytes Page：6 Pages | UTC 友顺 | | ||
3A, 500V N-CHANNEL POWER MOSFET 文件：181.85 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：178.84 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：178.84 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：178.84 Kbytes Page：6 Pages | UTC 友顺 | | ||
TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on) = 3.0 OHMS TMOS E-FET™ High Energy Power FET N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on)= 3.0 OHMS This advanced high voltageTMOS E–FET is designed to with stand high energy in the avalanche mode and switch efficiently. Thisnew high energy device also offer | MOTOROLA 摩托罗拉 | | ||
PowerMOS transistors Avalanche energy rated GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP3N50E is supplied | PHILIPS 飞利浦 | | ||
PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable off-state characteristics, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power | PHILIPS 飞利浦 | | ||
PowerMOS transistors Avalanche energy rated GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP3N50E is supplied | PHILIPS 飞利浦 | | ||
PowerMOS transistors Avalanche energy rated GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motorcontrol circuits and general purpose switching applications. The PHX3N50E is supplied | PHILIPS 飞利浦 | |
3N50产品属性
- 类型
描述
- Vdss(V)：
500
- Vgss(V)：
30
- Id(A)：
3
- Package：
TO-220F/TO-252
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
UTC/友顺 |
23+ |
TO-220F |
79999 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
24+ |
TO-3 |
10000 |
|||||
U |
23+ |
TO-220F |
8400 |
专注配单,只做原装进口现货 |
|||
UTC/友顺 |
2022+ |
TO-220F |
32500 |
原厂代理 终端免费提供样品 |
|||
26+ |
N/A |
56000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
TOSHIBA |
12+ |
TO-252 |
15000 |
全新原装,绝对正品,公司现货供应。 |
|||
UTC/友顺 |
2022+ |
10 |
全新原装 货期两周 |
3N50规格书下载地址
3N50参数引脚图相关
- 555电路
- 555
- 54286
- 5386
- 5369
- 51单片机
- 500t
- 5000
- 4921
- 4899
- 485接口
- 47471
- 4735
- 47301
- 4591
- 4536
- 4313
- 4069
- 4066
- 3q1
- 3N65K
- 3N65A
- 3N65_15
- 3N62N3
- 3N60ZG
- 3N60Z
- 3N60T
- 3N60P
- 3N60K
- 3N60G
- 3N60F
- 3N60D
- 3N60AL-TN3-R
- 3N60AL-TF3-T
- 3N60AG-TN3-T
- 3N60AG-TN3-R
- 3N60AG-TF3-T
- 3N60A4
- 3N60A
- 3N60_15
- 3N60_11
- 3N60_09
- 3N60
- 3N591A
- 3N57
- 3N50ZL-TF3-T
- 3N50ZG-TF3-T
- 3N50ZG
- 3N50Z
- 3N50L-TN3-R
- 3N50L-TF3-T
- 3N50G-TN3-R
- 3N50G-TF3-T
- 3N50_1109
- 3N50_11
- 3N48D-21
- 3N48
- 3N443BA
- 3N40K3
- 3N40_15
- 3N369
- 3N304-D000-S08BF
- 3N304-D000-S08 BF
- 3N304-A000-S08BF
- 3N304-A000-S08 BF
- 3N263TX
- 3N263
- 3N262TX
- 3N262
- 3N261TX
- 3N261
- 3N259-M4/51
- 3N259-M
- 3N259-E4/72
- 3N259-E4/51
- 3N259-E4/45
- 3N259_Q
- 3N259
- 3N258-M
- 3N258
- 3N257-M
- 3N257
- 3N256-M
- 3N256
- 3N255-M
- 3N255
- 3N254-M
- 3N254
3N50数据表相关新闻
3LD3054-0TK51
3LD3054-0TK51
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2023-3-33peak全新原装特价销售TP1562A
3peak全新原装特价销售TP1562A
2022-10-273peak全新原装特价销售TP1564A
3peak全新原装特价销售TP1564A
2022-10-273peak全新原装特价销售TPF140
3peak全新原装特价销售TPF140
2022-10-273MM绿发普绿短脚 LED
国产 现货100K
2022-7-5
DdatasheetPDF页码索引
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