60V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

60V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=22.7A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.045Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel 6 0-V (D-S) MOSFET

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功率 MOSFET，N 沟道，QFET®， 60 V，22.7 A，45 mΩ，DPAK

60V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

60V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

60V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

N-channel Enhancement Mode Power MOSFET

Features  VDS= 60V, ID= 30A RDS(ON)

60V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

N-channel Enhancement Mode Power MOSFET

Features  VDS= 60V, ID= 30A RDS(ON)

60V N-Channel MOSFET

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N-Channel QFET짰 MOSFET 60 V, 22.7 A, 45 m廓

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30 Amps, 60 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 30N06 is a low voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics. This power MOSFET is usually used at automotive applications in power supplies, high e

30 Amps, 60 Volts N-CHANNEL POWER MOSFET

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Fast Switching

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isc N-Channel MOSFET Transistor

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60V, 30A N-CHANNEL POWER MOSFET

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