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FQD2N60C价格
参考价格：￥1.8337
型号：FQD2N60CTM 品牌：Fairchild 备注：这里有FQD2N60C多少钱，2026年最近7天走势，今日出价，今日竞价，FQD2N60C批发/采购报价，FQD2N60C行情走势销售排行榜，FQD2N60C报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FQD2N60C | 600V N-Channel MOSFET Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av | FAIRCHILD 仙童半导体 |   | |
FQD2N60C | N-Channel QFET짰 MOSFET Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av | FAIRCHILD 仙童半导体 | | |
FQD2N60C | N-Channel QFET MOSFET Description These N-Channel enhancement mode power field effect transistors are produced using Corise Semiconductorÿs proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, an | KERSEMI | | |
FQD2N60C | N-Channel QFET짰 MOSFET Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high | FAIRCHILD 仙童半导体 | | |
FQD2N60C | N-Channel QFET짰 MOSFET 600 V, 1.9 A, 4.7 廓 Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high aval | ONSEMI 安森美半导体 | | |
FQD2N60C | 600V N-Channel MOSFET 文件：863.86 Kbytes Page：9 Pages | FAIRCHILD 仙童半导体 | | |
FQD2N60C | 功率 MOSFET，N 沟道，QFET®，600 V，1.9 A，4.7 Ω，DPAK | ONSEMI 安森美半导体 | | |
FQD2N60C | 600V N-Channel MOSFET 文件：863.86 Kbytes Page：9 Pages | FAIRCHILD 仙童半导体 | | |
FQD2N60C | N-Channel 650 V (D-S) MOSFET 文件：1.05894 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | |
N-Channel QFET짰 MOSFET Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high | FAIRCHILD 仙童半导体 | | ||
N-Channel QFET짰 MOSFET 600 V, 1.9 A, 4.7 廓 Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high aval | ONSEMI 安森美半导体 | | ||
N-Channel QFET짰 MOSFET Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av | FAIRCHILD 仙童半导体 | | ||
600V N-Channel MOSFET 文件：768.23 Kbytes Page：9 Pages | FAIRCHILD 仙童半导体 | | ||
2 Amps, 600 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in | UTC 友顺 | | ||
N2 Amps竊?00Volts N-Channel MOSFET Description The ET2N60 N-Ceannel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. Features ● RDS(ON) = 5.00Ω@VGS = 10 V ● Low gate charge | ESTEK 伊泰克电子 | | ||
2 Amps, 600/650 Volts N-CHANNEL POWER MOSFET The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power upplies, PWM | UTC 友顺 | | ||
600V N-Channel Power MOSFET Features ● RDS(ON) | DYELEC 迪一电子 | | ||
2A 600V N-channel Enhancement Mode Power MOSFET 文件：1.34834 Mbytes Page：13 Pages | WXDH 东海半导体 | |
FQD2N60C产品属性
- 类型
描述
- 型号
FQD2N60C
- 制造商
FAIRCHILD
- 制造商全称
Fairchild Semiconductor
- 功能描述
600V N-Channel MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ONSEMI |
25+ |
DPAK |
11543 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
FAIRCHILD/仙童 |
2023+ |
TO252 |
1478 |
十五年行业诚信经营,专注全新正品 |
|||
FAIRCILD |
22+ |
TO-252 |
8000 |
原装正品支持实单 |
|||
FAIRHL |
25+ |
TO-252 |
4500 |
全新原装、诚信经营、公司现货销售 |
|||
FAIRCHILD |
24+ |
TO-252(DPAK) |
8866 |
||||
FAIRCHILD/仙童 |
2450+ |
TO-252 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
SHY |
12+ |
TO-252 |
3745 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
FCS |
26+ |
TO263-5 |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
FAIRCHILD/仙童 |
24+ |
TO-252 |
9600 |
原装现货,优势供应,支持实单! |
|||
FAIRCHILD |
18+ |
TO252 |
85600 |
保证进口原装可开17%增值税发票 |
FQD2N60C规格书下载地址
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DdatasheetPDF页码索引
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