位置：首页 > IC中文资料第4446页 > FQD1N80TF
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
FQD1N80TF | N-Channel QFET MOSFET 800 V, 1.0 A, 20 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high a | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |   | |
800V N-Channel MOSFET Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high a | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
1.0 Amps, 800 Volts N-CHANNEL POWER MOSFET 文件：163.67 Kbytes Page：6 Pages | UTC 友顺 | | ||
1A, 800V N-CHANNEL POWER MOSFET 文件：182.22 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL MOSFET in a TO-92 Plastic Package 文件：991.35 Kbytes Page：6 Pages | FOSHAN 蓝箭电子 | | ||
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FQD1N80TF产品属性
- 类型
描述
- 型号
FQD1N80TF
- 功能描述
MOSFET 800V Single
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
三年内 |
1983 |
只做原装正品 |
|||||
FAIRCHILD |
20+ |
原装 |
65790 |
原装优势主营型号-可开原型号增税票 |
|||
FAIRCHIL |
24+ |
TO-252 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
Fairchild(飞兆/仙童) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
FAIRCHILD |
21+ |
TO-252 |
1458 |
只做原装正品,不止网上数量,欢迎电话微信查询! |
|||
ON/安森美 |
24+ |
TO-252-2(DPAK) |
30000 |
原装正品公司现货,假一赔十! |
|||
ON/安森美 |
21+ |
TO-252-2(DPAK) |
8080 |
只做原装,质量保证 |
|||
ON/安森美 |
21+ |
SMD |
30000 |
百域芯优势 实单必成 可开13点增值税 |
|||
FAIRCHILD/仙童 |
23+ |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
||||
FSC |
25+23+ |
TO-252 |
16526 |
绝对原装正品全新进口深圳现货 |
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FQD1N80TF规格书下载地址
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