型号 功能描述 生产厂家&企业 LOGO 操作

Power MOSFET(Vdss=200V, Rds(on)max=0.235ohm, Id=13A)

Benefits • Low Gate to Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters

IRF

Power MOSFET(Vdss=200V, Rds(on)max=0.235ohm, Id=13A)

Benefits • Low Gate to Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters

IRF

N-Channel MOSFET Transistor

文件:335.82 Kbytes Page:2 Pages

ISC

无锡固电

SMPS MOSFET

文件:3.72818 Mbytes Page:10 Pages

KERSEMI

N-Channel MOSFET Transistor

文件:335.82 Kbytes Page:2 Pages

ISC

无锡固电

更新时间:2025-8-13 15:17:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON
21+
TO-252
20000
全新原装公司现货
IR
24+
TO-252
9700
绝对原装正品现货假一罚十
IR
24+
TO-252
8964
只做原装假一赔十
IR
25+
TO-252
12588
原装正品,自己库存 假一罚十
IR
18+
TO-252
85600
保证进口原装可开17%增值税发票
Infineon(英飞凌)
24+
TO-252
7793
支持大陆交货,美金交易。原装现货库存。
VISHAY/威世
24+
TO-252
501760
免费送样原盒原包现货一手渠道联系
IR
23+
SOT-252
65400
IOR
24+
TO252
2600
原装现货假一赔十
IR
22+
TO-252
8000
原装正品支持实单

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