FQD11P06价格
参考价格：￥1.5898
型号：FQD11P06TM 品牌：Fairchild 备注：这里有FQD11P06多少钱，2026年最近7天走势，今日出价，今日竞价，FQD11P06批发/采购报价，FQD11P06行情走势销售排行榜，FQD11P06报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
丝印代码：FQD11P06；P-Channel QFET® MOSFET -60 V, -9.4 A, 185 mΩ Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av | ONSEMI 安森美半导体 |   | ||
FQD11P06 | P-Channel QFET® MOSFET -60 V, -9.4 A, 185 mΩ Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av | ONSEMI 安森美半导体 | | |
FQD11P06 | isc P-Channel MOSFET Transistor FEATURES ·Drain Current –ID=-9.4A@ TC=25℃ ·Drain Source Voltage- : VDSS= -60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.185Ω(Max) @ VGS= -10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for us | ISC 无锡固电 | | |
FQD11P06 | 功率 MOSFET，P 沟道，QFET®，-60 V，-9.4 A，185 mΩ，DPAK 该 P 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关模式电源、音频放大器、直流电机控制和可变开关电源应用。 •-9.4A, -60V, RDS(on)= 185mΩ（最大值）@VGS = -10 V, ID = -4.7A栅极电荷低（典型值：13nC)\n•低 Crss（典型值45pF)\n•100% 经过雪崩击穿测试\n•100% avalanche tested; | ONSEMI 安森美半导体 | | |
FQD11P06 | 60V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchildís proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w | FAIRCHILD 仙童半导体 | | |
FQD11P06 | P-Channel QFET짰 MOSFET -60 V, -9.4 A, 185 m廓 General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchildís proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w | FAIRCHILD 仙童半导体 | | |
P-Channel QFET짰 MOSFET -60 V, -9.4 A, 185 m廓 General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchildís proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w | FAIRCHILD 仙童半导体 | | ||
P-channel Enhancement Mode Power MOSFET Features VDS= -60V, ID= -20A RDS(ON) | BYCHIP 百域芯 | | ||
60V P-Channel MOSFET 文件：856.8 Kbytes Page：9 Pages | FAIRCHILD 仙童半导体 | | ||
P-Channel 60-V (D-S) MOSFET 文件：990.08 Kbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
60V P-Channel MOSFET Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high | FAIRCHILD 仙童半导体 | | ||
60V P-Channel MOSFET Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high | FAIRCHILD 仙童半导体 | | ||
60V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w | FAIRCHILD 仙童半导体 | | ||
60V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w | FAIRCHILD 仙童半导体 | | ||
60V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchildís proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w | FAIRCHILD 仙童半导体 | |
FQD11P06产品属性
- 类型
描述
- Pb-free：
Pb
- Status：
Active
- Channel Polarity：
P-Channel
- Configuration：
Single
- V(BR)DSS Min (V)：
-60
- VGS Max (V)：
±30
- VGS(th) Max (V)：
-4
- ID Max (A)：
-9.4
- PD Max (W)：
38
- RDS(on) Max @ VGS = 10 V(mΩ)：
185
- Qg Typ @ VGS = 10 V (nC)：
13
- Ciss Typ (pF)：
420
- Package Type：
DPAK-3/TO-252-3
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD |
24+ |
SOT-252 |
109000 |
||||
ON(安森美) |
25+ |
D-PAK |
21000 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
FSC |
26+ |
DIP-8 |
890000 |
一级总代理商原厂原装大批量现货
一站式服务 |
|||
VBsemi |
25+ |
TO252 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
ON(安森美) |
25+ |
D-PAK |
21000 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
20+ |
TO-252.220.263 |
78912 |
全新 发货1-2天 |
||||
仙童 |
06+ |
TO-252 |
8000 |
原装 |
|||
FAIRCHILD |
26+ |
TO-263D2-PAK |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
FAIRCHILD/仙童 |
23+ |
TO-252 |
30000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
原厂 |
23+ |
TO-252 |
5000 |
原装正品,假一罚十 |
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DdatasheetPDF页码索引
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