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FQD11P06价格
参考价格：￥1.5898
型号：FQD11P06TM 品牌：Fairchild 备注：这里有FQD11P06多少钱，2026年最近7天走势，今日出价，今日竞价，FQD11P06批发/采购报价，FQD11P06行情走势销售排行榜，FQD11P06报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
丝印代码：FQD11P06；P-Channel QFET® MOSFET -60 V, -9.4 A, 185 mΩ Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av | ONSEMI 安森美半导体 |   | ||
FQD11P06 | P-Channel QFET® MOSFET -60 V, -9.4 A, 185 mΩ Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av | ONSEMI 安森美半导体 | | |
FQD11P06 | isc P-Channel MOSFET Transistor FEATURES ·Drain Current –ID=-9.4A@ TC=25℃ ·Drain Source Voltage- : VDSS= -60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.185Ω(Max) @ VGS= -10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for us | ISC 无锡固电 | | |
FQD11P06 | 60V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchildís proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w | FAIRCHILD 仙童半导体 | | |
FQD11P06 | P-Channel QFET짰 MOSFET -60 V, -9.4 A, 185 m廓 General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchildís proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w | FAIRCHILD 仙童半导体 | | |
FQD11P06 | 功率 MOSFET，P 沟道，QFET®，-60 V，-9.4 A，185 mΩ，DPAK | ONSEMI 安森美半导体 | | |
P-channel Enhancement Mode Power MOSFET Features VDS= -60V, ID= -20A RDS(ON) | BYCHIP 百域芯 | | ||
P-Channel QFET짰 MOSFET -60 V, -9.4 A, 185 m廓 General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchildís proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w | FAIRCHILD 仙童半导体 | | ||
60V P-Channel MOSFET 文件：856.8 Kbytes Page：9 Pages | FAIRCHILD 仙童半导体 | | ||
P-Channel 60-V (D-S) MOSFET 文件：990.08 Kbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
60V P-Channel MOSFET Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high | FAIRCHILD 仙童半导体 | | ||
60V P-Channel MOSFET Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high | FAIRCHILD 仙童半导体 | | ||
60V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w | FAIRCHILD 仙童半导体 | | ||
60V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w | FAIRCHILD 仙童半导体 | | ||
60V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchildís proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w | FAIRCHILD 仙童半导体 | |
FQD11P06产品属性
- 类型
描述
- 型号
FQD11P06
- 制造商
Fairchild Semiconductor Corporation
- 功能描述
MOSFET P D-PAK
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON(安森美) |
25+ |
D-PAK |
21000 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
FSC |
25+23+ |
TO-252 |
42140 |
绝对原装正品全新进口深圳现货 |
|||
FAIRCILD |
22+ |
TO-252 |
8000 |
原装正品支持实单 |
|||
FAIRCHILD |
24+ |
TO-252-3 |
8866 |
||||
FAIRCHILD |
2430+ |
TO252 |
8540 |
只做原装正品假一赔十为客户做到零风险!! |
|||
FAIRCHILD/仙童 |
25+ |
TO-252 |
154680 |
明嘉莱只做原装正品现货 |
|||
原厂 |
23+ |
TO-252 |
10000 |
原装正品,假一罚十 |
|||
FAIRCHILD/仙童 |
24+ |
TO-252 |
9600 |
原装现货,优势供应,支持实单! |
|||
三年内 |
1983 |
只做原装正品 |
|||||
ON(安森美) |
2447 |
D-PAK |
105000 |
2500个/圆盘一级代理专营品牌!原装正品,优势现货, |
FQD11P06规格书下载地址
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