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FQU11P06价格
参考价格：￥1.9283
型号：FQU11P06TU 品牌：Fairchild 备注：这里有FQU11P06多少钱，2026年最近7天走势，今日出价，今日竞价，FQU11P06批发/采购报价，FQU11P06行情走势销售排行榜，FQU11P06报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
丝印代码：FQU11P06；P-Channel QFET® MOSFET -60 V, -9.4 A, 185 mΩ Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av | ONSEMI 安森美半导体 |   | ||
FQU11P06 | P-Channel QFET® MOSFET -60 V, -9.4 A, 185 mΩ Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av | ONSEMI 安森美半导体 | | |
FQU11P06 | isc P-Channel MOSFET Transistor FEATURES ·Drain Current –ID=-9.4A@ TC=25℃ ·Drain Source Voltage- : VDSS= -60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.185Ω(Max) @ VGS= -10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for us | ISC 无锡固电 | | |
FQU11P06 | 60V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchildís proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w | FAIRCHILD 仙童半导体 | | |
FQU11P06 | P-Channel QFET짰 MOSFET -60 V, -9.4 A, 185 m廓 General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchildís proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w | FAIRCHILD 仙童半导体 | | |
FQU11P06 | P-Channel 60-V (D-S) MOSFET 文件：1.66632 Mbytes Page：7 Pages | VBSEMI 微碧半导体 | | |
FQU11P06 | 功率 MOSFET，P 沟道，QFET®，-60 V，-9.4 A，185 mΩ，IPAK | ONSEMI 安森美半导体 | | |
P-Channel QFET짰 MOSFET -60 V, -9.4 A, 185 m廓 General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchildís proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w | FAIRCHILD 仙童半导体 | | ||
60V P-Channel MOSFET 文件：856.8 Kbytes Page：9 Pages | FAIRCHILD 仙童半导体 | | ||
60V P-Channel MOSFET Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high | FAIRCHILD 仙童半导体 | | ||
60V P-Channel MOSFET Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high | FAIRCHILD 仙童半导体 | | ||
60V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w | FAIRCHILD 仙童半导体 | | ||
60V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w | FAIRCHILD 仙童半导体 | |
FQU11P06产品属性
- 类型
描述
- 型号
FQU11P06
- 制造商
Fairchild Semiconductor Corporation
- 功能描述
MOSFET P CH 60V 9.4A I-PAK
- 制造商
Fairchild Semiconductor Corporation
- 功能描述
MOSFET, P CH, 60V, 9.4A, I-PAK
- 制造商
Fairchild Semiconductor Corporation
- 功能描述
P CHANNEL MOSFET, -60V, 9.4A, IPAK; Transistor
- Polarity
P Channel; Continuous Drain Current
- Id
9.4A; Drain Source Voltage
- Vds
-60V; On Resistance
- Rds(on)
185mohm; Rds(on) Test Voltage
- Vgs
-10V; Threshold Voltage Vgs
- Typ
-4V ;RoHS
- Compliant
Yes
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
25+ |
IPAK-3 |
21000 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
onsemi(安森美) |
25+ |
IPAK-3 |
21000 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
FAIRCHILD/仙童 |
2026+ |
I-PAKTO-251 |
54558 |
百分百原装现货 实单必成 欢迎询价 |
|||
FAIRCHILD |
22+ |
20000 |
公司只做原装 品质保障 |
||||
FAIRCHILD/仙童 |
25+ |
TO251 |
880000 |
明嘉莱只做原装正品现货 |
|||
FAIRCHILD/仙童 |
21+ |
I-PAKTO-251 |
30000 |
优势供应 实单必成 可13点增值税 |
|||
FAIRCHILD |
25+23+ |
TO251 |
11849 |
绝对原装正品全新进口深圳现货 |
|||
Fairchild/ON |
22+ |
TO2513 Short Leads IPak TO251A |
9000 |
原厂渠道,现货配单 |
|||
FAIRCHILDSEM |
2025+ |
TO-251-3 |
3577 |
全新原厂原装产品、公司现货销售 |
|||
VBsemi |
24+ |
TO251 |
9000 |
只做原装正品 有挂有货 假一赔十 |
FQU11P06规格书下载地址
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DdatasheetPDF页码索引
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