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FQD11P06TM价格
参考价格：￥1.5898
型号：FQD11P06TM 品牌：Fairchild 备注：这里有FQD11P06TM多少钱，2026年最近7天走势，今日出价，今日竞价，FQD11P06TM批发/采购报价，FQD11P06TM行情走势销售排行榜，FQD11P06TM报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FQD11P06TM | P-Channel QFET짰 MOSFET -60 V, -9.4 A, 185 m廓 General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchildís proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w | FAIRCHILD 仙童半导体 |   | |
FQD11P06TM | P-channel Enhancement Mode Power MOSFET Features VDS= -60V, ID= -20A RDS(ON) | BYCHIP 百域芯 | | |
FQD11P06TM | 丝印代码：FQD11P06；P-Channel QFET® MOSFET -60 V, -9.4 A, 185 mΩ Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av | ONSEMI 安森美半导体 | | |
FQD11P06TM | P-Channel 60-V (D-S) MOSFET 文件：990.08 Kbytes Page：8 Pages | VBSEMI 微碧半导体 | | |
60V P-Channel MOSFET Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high | FAIRCHILD 仙童半导体 | | ||
60V P-Channel MOSFET Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high | FAIRCHILD 仙童半导体 | | ||
60V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w | FAIRCHILD 仙童半导体 | | ||
60V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w | FAIRCHILD 仙童半导体 | | ||
60V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchildís proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w | FAIRCHILD 仙童半导体 | |
FQD11P06TM产品属性
- 类型
描述
- 型号
FQD11P06TM
- 功能描述
MOSFET TO-252 DPAK P-CH 60V
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON(安森美) |
25+ |
D-PAK |
21000 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
FAIRCHILD/仙童 |
25+ |
TO-252 |
32000 |
FAIRCHILD/仙童全新特价FQD11P06TM即刻询购立享优惠#长期有货 |
|||
Fairchild/ON |
22+ |
TO2523 DPak (2 Leads + Tab) SC |
9000 |
原厂渠道,现货配单 |
|||
VBsemi |
21+ |
TO252 |
10065 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
FAIRCHILD/仙童 |
21+ |
TO252 |
1709 |
||||
ON(安森美) |
23+ |
D-PAK |
9806 |
公司只做原装正品,假一赔十 |
|||
ONSemiconductor |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
ON/安森美 |
20+ |
TO-252 |
33690 |
||||
FAIRCHILD |
2430+ |
TO252 |
8540 |
只做原装正品假一赔十为客户做到零风险!! |
|||
ON/安森美 |
25+ |
TO-252 |
30000 |
全新原装现货,价格优势 |
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FQD11P06TM规格书下载地址
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