P-Channel QFET짰 MOSFET -60 V, -9.4 A, 185 m廓

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchildís proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w

P-channel Enhancement Mode Power MOSFET

Features  VDS= -60V, ID= -20A RDS(ON)

P-Channel QFET® MOSFET -60 V, -9.4 A, 185 mΩ

Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

P-Channel 60-V (D-S) MOSFET

文件：990.08 Kbytes Page：8 Pages

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=-11.4A@ TC=25℃ ·Drain Source Voltage- : VDSS=-60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.175Ω(Max)@VGS= -10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

60V P-Channel MOSFET

Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high

P-Channel QFET MOSFET -60 V, -11.4 A, 175 m廓

Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high

60V P-Channel MOSFET

文件：653.88 Kbytes Page：9 Pages

60V P-Channel MOSFET

文件：653.88 Kbytes Page：9 Pages