60V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w

功率 MOSFET，P 沟道，QFET®，-60 V，-11.4 A，175 mΩ，TO-220

这些 P 沟道增强型功率场效应晶体管采用飞兆专有的平面条形 DMOS 技术生产。 这一先进技术是专为最大限度地降低通态电阻，提供卓越开关性能，以及在雪崩和交换模式下承受高能量脉冲而定制的。 这些器件非常适合低电压应用，例如车用、DC/DC转换器和用于便携式及电池供电产品功率管理的高效开关。 •-11.4 A、-60 V、RDS(on) = 175 mΩ（最大值）@ VGS = -10 V、ID = -5.7 A\n•低栅极电荷（典型值 13 nC)\n•低 Crss（典型值 45 pF)\n•100% 经过雪崩击穿测试\n•175℃ 最大结温额定值;

isc P-Channel MOSFET Transistor

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60V P-Channel MOSFET

Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high

60V P-Channel MOSFET

Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high

60V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w

60V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchildís proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w