200V N-Channel MOSFET

Description This N-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s proprietary planar stripe, DMOS technology. Features • 6.8 A, 200 V, RDS(on)= 0.36 Ω(Max.) @ VGS= 10 V • Low Gate Charge (Typ. 13.5 nC) • Low Crss (Typ. 13 pF)

200V N-Channel MOSFET

200V N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high

isc N-Channel MOSFET Transistor

• FEATURES • With low gate drive requirements • Easy to drive • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

功率 MOSFET，N 沟道，QFET®，200 V，9.5 A，360 mΩ，TO-220F

该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关电源、有源功率因数校正（PFC）及照明灯电子镇流器。 •9.5A, 200V, RDS(on)= 360mΩ（最大值）@VGS = 10 V, ID = 4.75A栅极电荷低（典型值：20nC)\n•低 Crss（典型值40.5pF)\n•100% 经过雪崩击穿测试\"\n• 100% avalanche tested;

200V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. Features • 6.8A, 200V, RDS(on)= 0.36Ω@VGS= 10 V • Low gate charge ( typical 13 nC) • Low Crss ( typical 14 pF) • Fa

200V LOGIC N-Channel MOSFET

200V N-Channel MOSFET

200V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand h

200V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand h

200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. Features • 7.8 A,200 V, RDS(on) = 0.36Ω (Max.)@ VGS = 10 V • Low Gate Charge (Typ. 13.5 nC) • Low Crss (Typ. 13pF)