位置：首页 > IC中文资料第1271页 > FQB10N20
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
FQB10N20 | 200VN-ChannelMOSFET
| FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  |   |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=9.5A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.36Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
200VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=10A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.36Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
200VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandh | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
200VN-ChannelMOSFET Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology. ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigh | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
HIGHPOWER125WHIGHQUALITYAUDIOAMPLIFIERAPPLICATIONS [EXICON] NANDPCHANNELLAERALMOSFETS | ETC1List of Unclassifed Manufacturers 未分类制造商 |  | | |
UninterruptiblePowerSupply Description UniFETTMMOSFETisFairchildSemiconductor’shighvoltageMOSFETfamilybasedonplanarstripeandDMOStechnology.ThisMOSFETistailoredtoreduceon-stateresistance,andtoprovidebetterswitchingperformanceandhigheravalancheenergystrength.Thisdevicefamilyissuitablef | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
N-Channel200V(D-S)MOSFET 文件：1.6556 Mbytes Page：7 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | | |
NCHANNELLATERALMOSFET 文件：400.4 Kbytes Page：4 Pages | ETC1List of Unclassifed Manufacturers 未分类制造商 | | |
FQB10N20产品属性
- 类型
描述
- 型号
FQB10N20
- 制造商
Fairchild Semiconductor Corporation
- 功能描述
MOSFET N D2-PAK
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD |
1932+ |
TO-263 |
467 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
FAIRCHILD |
23+ |
TO-263 |
4500 |
全新原装、诚信经营、公司现货销售 |
|||
FAIRCHILD |
23+ |
NA |
5556 |
航宇科工半导体-中国航天科工集团战略合作伙伴! |
|||
onsemi(安森美) |
23+ |
TO-263 |
8357 |
支持大陆交货,美金交易。原装现货库存。 |
|||
ON |
21+ |
TO-263 |
100 |
原装现货假一赔十 |
|||
FAIRCHILD |
20+/21+ |
TO-263 |
9500 |
全新原装进口价格优势 |
|||
FAIRCILD |
22+ |
TO-263 |
8000 |
原装正品支持实单 |
|||
FAIRCHILD/仙童 |
2024+实力库存 |
TO-263 |
4767 |
只做原厂渠道 可追溯货源 |
|||
FAIRCHILD |
08+(pbfree) |
TO-263 |
8866 |
||||
FAIRC |
23+ |
TO-263 |
90000 |
一级代理商进口原装现货、价格合理 |
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FQB10N20规格书下载地址
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FQB10N20数据表相关新闻
FQB55N10TM
FQB55N10TM
2024-1-16FQD10N20CTM
FQD10N20CTM 公司原装现货，假一赔十
2023-4-17FQA30N40 TO-3P FAIRCHILD/仙童 MOS(场效应管) 原装正品
原装正品现货供应0755-28892389/13713856319；QQ:2639752116；微信：13713856319；
2021-3-25FQA9N90C
FQA9N90C，全新原装当天发货或门市自取0755-82732291.
2020-6-25FQA8N100C全新原装现货
随时可发货
2019-9-17FQD16N25C
FQD16N25C，全新原装当天发货或门市自取0755-82732291.
2019-8-15
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