位置：首页 > IC中文资料 > FQB55N10TMMOS(场效应管)
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 100V, 55A, RDS(ON) = 16mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ TO-251 & TO-252 package. | CET 华瑞 |   | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 55A, RDS(ON) = 16mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 100V, 55A, RDS(ON) = 16mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ TO-251 & TO-252 package. | CET 华瑞 | | ||
Fast Switching Speed 文件：49.16 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
N-Channel MOSFET uses advanced SGT technology 文件：1.7768 Mbytes Page：5 Pages | DOINGTER 杜因特 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CET/華瑞 |
24+ |
NA/ |
2530 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
CET |
25+ |
TO-251 |
1519 |
原装正品,假一罚十! |
|||
CET |
25+23+ |
TO252 |
75232 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
CET |
25+ |
TO-252 |
4500 |
全新原装、诚信经营、公司现货销售! |
|||
CET |
24+ |
TO-252 |
455 |
||||
PHI |
24+ |
TSSOP48 |
17860 |
公司现货库存,支持实单 |
|||
CET |
23+ |
原厂原包 |
19960 |
只做进口原装 终端工厂免费送样 |
|||
CET/華瑞 |
23+ |
SOT252 |
7000 |
||||
CET/華瑞 |
2022+ |
TO-251 |
30000 |
进口原装现货供应,原装 假一罚十 |
|||
CET |
09+ |
SOT252 |
2530 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
FQB55N10TMMOS(场效应管)芯片相关品牌
FQB55N10TMMOS(场效应管)规格书下载地址
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DdatasheetPDF页码索引
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