位置：首页 > IC中文资料第911页 > FQB20N06TM
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
60V N-Channel Enhancement Mode Power MOSFET Features VDS = 60V,ID =20A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is acquired | UMW 友台半导体 |   | ||
60V N-Channel Enhancement Mode Power MOSFET General Description The 20N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features VDS = 60V,ID =20A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technology | EVVOSEMI 翊欧 | | ||
N-Channel 60-V (D-S) MOSFET 文件：897.38 Kbytes Page：6 Pages | VBSEMI 微碧半导体 | | ||
Fast Switching 文件：67.37 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
20A mps,60 Volts N-CHANNEL MOSFET 文件：193.72 Kbytes Page：2 Pages | CHONGQING 平伟实业 | |
FQB20N06TM产品属性
- 类型
描述
- 型号
FQB20N06TM
- 功能描述
MOSFET 60V N-Channel QFET Logic Level
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
GT/YGMOS |
23+ |
TO-252 |
90000 |
||||
SOT252 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
AOS |
TO-252 |
980 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
INFINEON |
23+ |
SOT-252 |
3000 |
原装正品假一罚百!可开增票! |
|||
ON |
25+ |
TO252 |
30000 |
原装正品公司现货,假一赔十! |
|||
UMW/广东友台半导体 |
2450+ |
TO-252-2 |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
ST |
25+ |
原厂原封 |
16900 |
原装，请咨询 |
|||
ON/FAI |
26+ |
TO-251 |
9000 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
ON |
21+ |
TO252 |
10000 |
只做原装,质量保证 |
|||
ST |
26+ |
NA |
60000 |
只有原装 可配单 |
FQB20N06TM规格书下载地址
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FQB20N06TM数据表相关新闻
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原装正品现货供应 0755-28892389/13713856319；QQ:2639752116；微信：13713856319；
2021-3-25FQA9N90C
FQA9N90C，全新原装当天发货或门市自取0755-82732291.
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随时可发货
2019-9-17
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