300V N-Channel MOSFET

Description UniFET™ MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=38.4A@ TC=25℃ ·Drain Source Voltage- : VDSS=300V(Min) ·Static Drain-Source On-Resistance : RDS(on) =85mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

N 沟道 QFET® MOSFET 300 V，38.4 A，85 mΩ

此类 N 沟道增强型电场效应晶体管是使用安森美半导体的平面条纹和 DMOS 专属技术生产的。此先进技术特别适用于最大程度降低导通电阻，提供出色的开关性能，可承受雪崩和换相模式下的高能量脉冲。这些器件非常适用于高效开关模式电源、功率因数校正、基于半桥的电子灯镇流器。 •38.4 A、300 V、RDS(on) = 85 mΩ（最大值）（VGS = 10 V、ID = 19.2 A）\n•低栅极电荷（典型值 90 nC)\n•低 Crss（典型值 70 pF)\n•100% 经过雪崩击穿测试\n•符合 RoHS 标准;

N-Channel MOSFET 300V, 38A, 0.085廓

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 38A@ TC=25℃ ·Drain Source Voltage : VDSS= 300V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 85mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

N-Channel UniFETTM Ultra FRFETTM MOSFET

Description UniFET MOSFETis Fairchild Semicondu ctor’s high voltage MOSFET family based on planarstripeand DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide be tter switching performance andhigher avalanche energy strength. UniFET Ultra F RFET MOSFET