N-Channel UniFETTM Ultra FRFETTM MOSFET

Description UniFET MOSFETis Fairchild Semicondu ctor’s high voltage MOSFET family based on planarstripeand DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide be tter switching performance andhigher avalanche energy strength. UniFET Ultra F RFET MOSFET

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=38A@ TC=25℃ ·Drain Source Voltage : VDSS= 300V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 120mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

功率 MOSFET，N 沟道，UniFETTM，Ultra FRFETTM，300 V，38A，120 mΩ，D2PAK

UniFET™ MOSFET 是飞兆半导体的高压 MOSFET 系列产品，基于平面条形技术和 DMOS 技术。该 MOSFET 产品专用于降低通态电阻，并提供更好的开关性能和更高的雪崩能量强度。UniFET Ultra FRFETTM MOSFET 具有非常卓越的体二极管反向恢复性能。其 trr小于 50 nsec 且反向 dv/dt 抗扰度为 20 V/nsec，而一般的平面 MOSFET 产品分别为 200 nsec 以上和 4.5 V/nsec。因此，UniFET Ultra FRFET MOSFET 在要求 MOSFET 体二极管性能改进的某些应用中可消除多余的元件，并提高系统的可靠性

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 38A@ TC=25℃ ·Drain Source Voltage : VDSS= 300V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 85mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

N-Channel MOSFET 300V, 38A, 0.085廓

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high

300V N-Channel MOSFET

Description UniFET™ MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable