Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energypulse in the avalanche andcommutation mode. These devices are well suited for high effi

cient switched mode power supplies and active power factor correction.

Features

• RDS(on) = 0.07Ω( Typ.) @ VGS= 10V, ID= 19A

• Low gate charge ( typical 60 nC)

•Low Crss ( typical 60 pF)

• Fast switching

• 100 avalanche tested

• Improved dv/dt capability

• ESD Improved capability

•RoHS Compliant