N-Channel MOSFET 300V, 38A, 0.085廓

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 38A@ TC=25℃ ·Drain Source Voltage : VDSS= 300V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 85mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

功率 MOSFET，N 沟道，UniFETTM，300V，38A，85mΩ，TO-3P

UniFETTM MOSFET 是飞兆半导体®的高压 MOSFET 系列产品，基于平面条形和 DMOS 技术。 该 MOSFET 产品专用于降低通态电阻，并提供更好的开关性能和更高的雪崩能量强度。 该器件系列适用于开关电源转换器应用，如功率因数校正（PFC）、平板显示器（FPD）电视电源、ATX 及灯用电子镇流器。 •RDS(on) = 70mΩ （典型值）@ VGS = 10V, ID = 19A\n•低栅极电荷（典型值 60nC） \n•低 Crss（典型值 60pF） \n•100% 经过雪崩击穿测试\n•改进了 ESD 防护能力\n•符合 RoHS 标准;

N-Channel UniFETTM Ultra FRFETTM MOSFET

Description UniFET MOSFETis Fairchild Semicondu ctor’s high voltage MOSFET family based on planarstripeand DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide be tter switching performance andhigher avalanche energy strength. UniFET Ultra F RFET MOSFET

300V N-Channel MOSFET

Description UniFET™ MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable