800V N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high a

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=12.6A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.75Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

800V N-Channel MOSFET

800V N-Channel MOSFET

文件：830.55 Kbytes Page：9 Pages

800V N-Channel MOSFET

文件：833.88 Kbytes Page：8 Pages

12.6 A, 800 V, RDS(on) = 750 m廓 (Max.) @ VGS = 10 VID = 6.8 A

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high a

800V N-Channel MOSFET

文件：830.55 Kbytes Page：9 Pages

800V N-Channel MOSFET

文件：833.88 Kbytes Page：8 Pages

800V N-Channel MOSFET

文件：830.55 Kbytes Page：9 Pages

800V N-Channel MOSFET

文件：833.88 Kbytes Page：8 Pages

Power MOSFET, N-Channel, QFET®, 800 V, 12.6 A, 750 mΩ, TO-3P

N 沟道 QFET® MOSFET 800V, 12.6A, 750mΩ

800V N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av