800V N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high a

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=12.6A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.75Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

800V N-Channel MOSFET

800V N-Channel MOSFET

文件：830.55 Kbytes Page：9 Pages

800V N-Channel MOSFET

文件：833.88 Kbytes Page：8 Pages

Power MOSFET, N-Channel, QFET®, 800 V, 12.6 A, 750 mΩ, TO-3P

该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关电源、有源功率因数校正（PFC）及照明灯电子镇流器。 •12.6A, 800V, RDS(on)= 750mΩ（最大值）@VGS = 10 V, ID = 6.3A栅极电荷低（典型值：68nC)\n•低 Crss（典型值30pF)\n•100% 经过雪崩击穿测试\n•100% avalanche tested;

N 沟道 QFET® MOSFET 800V, 12.6A, 750mΩ

该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关电源、有源功率因数校正（PFC）及照明灯电子镇流器。 •12.6A, 800V, RDS(on)= 750mΩ（最大值）@VGS = 10 V, ID = 6.3A栅极电荷低（典型值：68nC)\n•低 Crss（典型值30pF)\n•100% 经过雪崩击穿测试\n•100% avalanche tested;

12.6 A, 800 V, RDS(on) = 750 m廓 (Max.) @ VGS = 10 VID = 6.8 A

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high a

800V N-Channel MOSFET

文件：830.55 Kbytes Page：9 Pages

800V N-Channel MOSFET

文件：833.88 Kbytes Page：8 Pages

800V N-Channel MOSFET

文件：830.55 Kbytes Page：9 Pages

800V N-Channel MOSFET

文件：833.88 Kbytes Page：8 Pages

800V N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

HiPerFET Power MOSFETs Q Class

N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low Qg Features • IXYS advanced low Qg process • International standard packages • Low RDS (on) • Unclamped Inductive Switching (UIS) rated • Fast switching • Molding epoxies meet UL94V-0 flammability classification Advantages • Easy

MegaMOSFET

N-Channel Enhancement Mode Features ● International standard packages ● Low RDS (on) HDMOSTM process ● Rugged polysilicon gate cell structure ● Low package inductance (

CoolMOS Power MOSFET ISOPLUS220

文件：1.14569 Mbytes Page：2 Pages