800V N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 8.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.75Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

功率 MOSFET，N 沟道，QFET®，800V，8A，750mΩ，TO-3PF

该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关电源、有源功率因数校正（PFC）及照明灯电子镇流器。 •8A, 800V, RDS(on)= 750mΩ（最大值）@VGS = 10 V, ID = 4A栅极电荷低（典型值：68nC)\n•低 Crss（典型值30pF)\n•Low Crss ( Typ. 30pF);

800V N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high a

HiPerFET Power MOSFETs Q Class

N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low Qg Features • IXYS advanced low Qg process • International standard packages • Low RDS (on) • Unclamped Inductive Switching (UIS) rated • Fast switching • Molding epoxies meet UL94V-0 flammability classification Advantages • Easy

MegaMOSFET

N-Channel Enhancement Mode Features ● International standard packages ● Low RDS (on) HDMOSTM process ● Rugged polysilicon gate cell structure ● Low package inductance (

CoolMOS Power MOSFET ISOPLUS220

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